High-k Dummy Pattern Sidewall Insulation for Step Isolation
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Solution Overview
Problem
In semiconductor device manufacturing, the exposure of high-dielectric-constant insulating film surfaces during processing leads to material detachment and re-adhesion to unintended locations, causing manufacturing issues due to residual portions with exposed high-dielectric-constant insulating film on both surfaces.
Innovation Solution
A semiconductor device design featuring a dummy pattern that straddles the step portion on the element isolation region, with a sidewall insulating film covering the high-dielectric-constant insulating film exposed from both side surfaces of the dummy pattern, preventing material re-adhesion by ensuring complete coverage and minimizing exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a step portion is formed on the element isolation region during manufacturing, then the insulating film can be continuous from the memory cell region to the element isolation region, but the high-dielectric-constant insulating film becomes exposed on both the upper surface and side surface of the residual portion, causing material detachment and re-adhesion issues
Solution Approach 1:
The patent extracts and removes the exposed high-dielectric-constant insulating film from the side surface of the residual portion through selective etching processes. By removing this exposed film that causes detachment and re-adhesion problems, the system maintains the beneficial continuous insulating film structure while eliminating the harmful exposed surfaces.
Solution Approach 2:
The patent introduces an intermediary protective film or coating over the exposed high-dielectric-constant insulating film on the side surface. This intermediary layer prevents direct exposure of the high-k material to processing environments, thereby preventing detachment and re-adhesion while allowing the underlying continuous insulating film structure to remain intact.
2Ease of manufacture
If the high-dielectric-constant insulating film is exposed on both surfaces of the residual portion, then the manufacturing process can proceed with standard patterning, but material may detach and re-adhere to unintended locations such as another region of the semiconductor device or manufacturing apparatus
Solution Approach 1:
The patent applies preliminary protective measures by forming a protective film or coating on the exposed high-dielectric-constant insulating film before standard patterning processes. This preliminary protection prevents material detachment and re-adhesion to unintended locations during subsequent manufacturing steps, while still allowing standard patterning to proceed.
Solution Approach 2:
The patent uses a disposable protective coating or sacrificial layer that is applied temporarily to protect the exposed high-k insulating film during processing. This temporary protective layer is later removed, having served its purpose of preventing material detachment and re-adhesion during the critical patterning stages.
3Stability of the object's composition
If residual portions of high-dielectric-constant insulating film and conductive film are formed on the side surface of the step portion, then complete coverage during patterning is achieved, but the exposed surfaces create opportunities for material to re-adhere to unintended locations
Solution Approach 1:
The patent selectively removes the exposed high-dielectric-constant insulating film from the side surface of the residual portion through targeted etching processes. This extraction eliminates the source of material detachment and re-adhesion problems while preserving the complete coverage of the insulating film on the upper surface and in the trench region.
Solution Approach 2:
The patent applies different treatments to different regions: the exposed high-k insulating film on the side surface is either removed or protected, while the insulating film in other regions maintains its complete coverage. This local differentiation allows the system to eliminate re-adhesion hazards in specific areas without compromising the overall film integrity and coverage.
Data Source
AI summary
A semiconductor device includes a first element disposed in a first region and including a high-dielectric-constant insulating film, a second element disposed in a second region, and an element isolation portion disposed between the first region and the second region and electrically isolating between the first element and the second element. A step portion is formed on the surface of the element isolation portion. The semiconductor device further includes a dummy pattern that straddles the step portion. The dummy pattern includes a first high-dielectric-constant insulating film and a conductive film covering the upper surface of the first high-dielectric-constant insulating film. The first high-dielectric-constant insulating film is exposed from both side surfaces of the dummy pattern. The semiconductor device further includes a sidewall insulating film covering the first high-dielectric-constant insulating film exposed from both side surfaces of the dummy pattern.