Seamless High-k Dielectric Gap Filling for Narrow Semiconductor Features

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Solution Overview

Problem

Conformal dielectric layers deposited in semiconductor features using traditional methods often form seams, which inhibit isolating performance, especially in small features or structures with inner bowing shapes, leading to voids and decreased performance.

Innovation Solution

A method involving high metal ionization physical vapor deposition (PVD) to fill features from the bottom up, followed by oxidation or nitridation processes to convert the metal fill into seamless high-k dielectric material, using either thermal or plasma-assisted techniques, ensuring complete and void-free filling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conformal dielectric layers are deposited using traditional CVD or ALD methods, then the dielectric material is deposited uniformly on sidewalls, but seams form inside narrow features causing voids and poor isolation performance

Engineering Contradiction:

Improvegap filling qualityVSAvoidisolation performance

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

Instead of depositing conformally from the top down like traditional CVD/ALD, the patent inverts the approach by using PVD to deposit material from the bottom up, filling the feature from the base upward to eliminate seam formation

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The patent changes the deposition parameters by switching from chemical vapor deposition to physical vapor deposition with high ionization, altering the deposition mechanism to achieve bottom-up filling behavior that prevents seam formation

Inventive Principle:

Principle #35Parameter changes

2Quantity of substance

If conformal deposition is used to fill narrow features, then material is deposited on all surfaces, but the seam formation prevents complete filling and creates voids

Engineering Contradiction:

Improvedielectric material fillVSAvoidseamless filling

Core Design Contradiction:

Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent inverts the deposition direction by filling from the bottom up rather than conformally from the top down, ensuring complete material fill without seam formation that would create voids

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The patent replaces the chemical deposition mechanism of CVD/ALD with a physical vapor deposition mechanism using high ionization PVD, changing the fundamental deposition process to achieve seamless filling

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Ease of manufacture

If traditional PVD methods are used for gap filling, then deposition is simpler, but metal ionization is insufficient leading to poor conformality and seam formation

Engineering Contradiction:

Improvedeposition processVSAvoidgap filling quality

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent changes the PVD process parameters by implementing high ionization conditions with specific RF power levels and pressure ranges, transforming the deposition quality to achieve seamless filling while maintaining process simplicity

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach achieves seamless dielectric gap filling in narrow features, enhancing isolation performance and addressing the limitations of traditional conformal layer deposition methods by eliminating seams and voids.

Implementation Method 1

depositing the metal material is performed using a high metal ionization physical vapor deposition (PVD) process

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 2

high metal ionization physical vapor deposition (PVD) process

Methodology Applied

Scientific EffectIonization: Ionisation

Implementation Method 3

treating the seamless metal gap fill by oxidizing the metal material of the seamless metal gap fill with an oxidation process

Methodology Applied

Scientific EffectOxidation: Oxidation

Implementation Method 4

the plasma-assisted oxidation process is an inductively coupled plasma (ICP) or a capacitively coupled plasma (CCP) oxygen plasma discharge-based oxidation process

Methodology Applied

Scientific EffectPlasma: Plasma

Data Source

PatentUS11830728B2Methods for seamless gap filling of dielectric material

Publication Date: 2023.11.28 APPLIED MATERIALS INC

AI summary

A method for dielectric filling of a feature on a substrate yields a seamless dielectric fill with high-k for narrow features. In some embodiments, the method may include depositing a metal material into the feature to fill the feature from a bottom of the feature wherein the feature has an opening ranging from less than 20 nm to approximately 150 nm at an upper surface of the substrate and wherein depositing the metal material is performed using a high ionization physical vapor deposition (PVD) process to form a seamless metal gap fill and treating the seamless metal gap fill by oxidizing/nitridizing the metal material of the seamless metal gap fill with an oxidation/nitridation process to form dielectric material wherein the seamless metal gap fill is converted into a seamless dielectric gap fill with high-k dielectric material.