Selective High-k Gate Dielectric Deposition for FinFET Gap Filling
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Solution Overview
Problem
Existing FinFETs and methods for fabricating them have limitations in achieving optimal gate-filling and gap-filling processes due to the challenges of depositing gate dielectric layers on hydrophilic surfaces.
Innovation Solution
The formation of hydrophobic surfaces on the inner sidewalls of the gate opening by treating them with plasma or using carbon-containing process gases, which obstructs or slows down the deposition of the gate dielectric layer, thereby increasing the gate-filling window and facilitating the gap-filling process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the gate dielectric layer is deposited on hydrophilic surfaces, then the deposition process is straightforward, but the gate-filling window is reduced and gap-filling is difficult
Solution Approach 1:
The patent changes the surface energy parameter of the inner sidewalls from hydrophilic to hydrophobic through plasma treatment or carbon-containing process gases. This parameter change increases the gate-filling window by controlling the deposition rate of the gate dielectric layer, allowing better gap-filling while maintaining deposition feasibility
Solution Approach 2:
The patent introduces an intermediary layer (hydrophobic surface treatment layer) on the inner sidewalls before depositing the gate dielectric layer. This intermediary layer mediates the interaction between the deposition process and the substrate, controlling material accumulation to optimize gate-filling
2Productivity
If the deposition of gate dielectric layer is accelerated, then the manufacturing efficiency is improved, but the gap-filling process becomes more difficult
Solution Approach 1:
The patent applies different surface properties to different locations: the inner sidewalls are made hydrophobic to slow down local deposition, while the gate opening floor remains hydrophilic for normal deposition. This local quality differentiation enables both efficient overall deposition and precise gap-filling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively enlarges the gate-filling window, improving the gap-filling process and enhancing the formation of the gate electrode layer into the gate opening, thus improving the overall semiconductor device performance.
Implementation Method 1
The inner sidewalls of the gate opening is treated with a plasma or the spacer elements are formed by using a carbon-containing process gas, so that the inner sidewalls of the gate opening have hydrophobic surfaces
Implementation Method 2
the inner sidewalls of the gate opening have hydrophobic surfaces. The hydrophobic surfaces of gate opening obstruct or slow down the formation of the gate dielectric layer thereon
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes first and second gate spacers formed over a semiconductor substrate, longitudinally extending along a first direction, and separated from each other by a gate electrode layer. A first insulating layer longitudinally extends along a second direction to pass through the gate electrode layer and the first and second gate spacers. A gate dielectric layer has a top surface covered by the gate electrode layer. The top width of the gate dielectric layer is less than that of the gate electrode layer. The first and second gate spacers and the first insulating layer have first, second and third hydrophobic surfaces, respectively. These hydrophobic surfaces are in direct contact with first, second and third sidewall surfaces of the gate electrode layer, respectively.