High-k Dielectric Gate Stack for Memory Power Reduction
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Solution Overview
Problem
Current semiconductor device manufacturing methods face challenges in efficiently forming high-quality gate stacks for memory devices, particularly in achieving optimal dielectric constants and layer thicknesses for effective capacitive coupling and reduced power consumption.
Innovation Solution
The method involves forming a substrate with a high-k dielectric material as a tunneling or inter-gate dielectric layer, followed by a charge storage layer and a control gate layer, with precise etching and deposition processes to create gate stacks that include a select gate layer and smoothing layers, optimizing the dielectric constants and layer thicknesses for improved capacitive coupling and reduced power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional dielectric materials are used in gate stacks, then manufacturing process is simpler, but capacitive coupling is insufficient and power consumption increases
Solution Approach 1:
The patent changes the dielectric constant parameter by replacing conventional dielectric materials with high-k dielectric materials in the gate stack. This parameter change increases capacitive coupling between control gate and channel, thereby reducing power consumption while maintaining manageable device complexity through systematic material substitution
Solution Approach 2:
The patent employs composite material structures by combining high-k dielectric materials with charge trapping layers and control gate materials to form a multi-layer gate stack. This composite approach optimizes both capacitive coupling and charge storage functionality, achieving reduced power consumption without excessive complexity increase
2Use of energy by moving object
If high-k dielectric materials are used to improve capacitive coupling, then power consumption is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent performs preliminary actions by carefully designing and controlling the deposition parameters of high-k dielectric layers before actual manufacturing. This includes pre-establishing optimal thickness ranges and deposition conditions to ensure that subsequent manufacturing processes can achieve required precision without excessive difficulty
Solution Approach 2:
The patent optimizes the thickness parameter of high-k dielectric layers to balance capacitive coupling benefits with manufacturability. By selecting specific thickness ranges, the patent achieves sufficient power reduction while keeping manufacturing precision requirements within practical limits
3Use of energy by moving object
If gate stack layers are optimized for capacitive coupling, then power consumption decreases, but device complexity increases
Solution Approach 1:
The patent implements multi-functionality by designing gate stack layers that simultaneously perform multiple functions: high-k dielectric layers provide both capacitive coupling for power reduction and serve as structural foundations for charge trapping layers. This universal approach reduces the need for separate dedicated layers, thereby limiting complexity increase
Solution Approach 2:
The patent applies nesting by placing charge trapping layers within or adjacent to high-k dielectric layers in the gate stack structure. This nested arrangement allows charge storage functionality to be integrated within the capacitive coupling structure, achieving power reduction without proportionally increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the capacitive coupling in memory devices, reducing the power required to operate them and improving the overall efficiency and reliability of semiconductor devices.
Implementation Method 1
forming a substrate with a high-k dielectric material as a tunneling or inter-gate dielectric layer... optimizing the dielectric constants and layer thicknesses for improved capacitive coupling and reduced power consumption
Data Source
AI summary
One or more embodiments relate to a method of forming a semiconductor device, including: providing a substrate; forming a gate stack over the substrate, the gate stack including a control gate over a charge storage layer; forming a conductive layer over the gate stack; etching the conductive layer to remove a portion of the conductive layer; and forming a select gate, the forming the select gate comprising etching a remaining portion of the conductive layer.