3D Memory Charge Storage Films with High-k Segmentation
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Solution Overview
Problem
In three-dimensional semiconductor memory devices, the reduction of electrode film and interlayer insulating film thickness leads to easy movement of electric charges stored in the charge storage film, compromising charge retention and data integrity.
Innovation Solution
A semiconductor storage device design featuring alternately stacked electrode and insulating films, with High-k material-based charge storage films and silicon nitride films, along with a tunnel insulating film, to limit electric charge movement and enhance charge retention, using a manufacturing process that includes radical nitriding and oxidation to form these films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the film thickness of the electrode film and interlayer insulating film is reduced as the lamination number increases, then the storage capacity increases, but the electric charges retained in the charge storage film easily move
Solution Approach 1:
The charge storage film is divided into multiple segments along the thickness direction, with each segment corresponding to a different electrode film. Insulating films are provided between these segments to electrically isolate them. This segmentation prevents charge movement between different storage regions while maintaining thin film structures for high capacity.
Solution Approach 2:
Insulating films are introduced as intermediary layers between charge storage films corresponding to different electrode films. These insulating films act as barriers that prevent electrical interaction and charge movement between adjacent charge storage regions, thereby improving charge retention while allowing continued scaling.
2Productivity
If the film thickness is reduced to increase lamination number, then the storage density improves, but charge movement increases compromising data integrity
Solution Approach 1:
The memory structure is segmented into independent storage units, each with its own charge storage film and insulating film combination. This segmentation allows for higher lamination numbers and storage density while preventing charge leakage that would compromise data integrity between adjacent cells.
Solution Approach 2:
Insulating films serve as intermediary barrier layers that physically and electrically separate adjacent charge storage regions. This mediation prevents charge migration between cells, preserving data integrity even as film thicknesses are reduced to increase storage density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively limits electric charge movement, improves charge retention characteristics, and enhances data write and erasing performance by using High-k materials and silicon nitride films, while reducing tunnel current and simplifying film formation processes.
Implementation Method 1
a manufacturing process that includes radical nitriding and oxidation to form these films
Implementation Method 2
A first and a second charge storage films that are arranged away from each other in the first direction inside the stacked body and each face one of the electrode films. The first and the second charge storage films each include a first film that is in contact with the electrode film and contains a High-k material
Implementation Method 3
a tunnel insulating film that extends in the first direction inside the stacked body and is in contact with the first and the second charge storage films
Implementation Method 4
a manufacturing process that includes radical nitriding and oxidation to form these films
Data Source
AI summary
A semiconductor storage device relating to one embodiment includes: a stacked body in which electrode films and insulating films are alternately stacked in a first direction; a first and a second charge storage films that are arranged away from each other in the first direction inside the stacked body and each face one of the electrode films; and a tunnel insulating film that extends in the first direction inside the stacked body and is in contact with the first and the second charge storage films. The first and the second charge storage films each include a first film that is in contact with the electrode film and contains a High-k material, and a second film that is provided between the first film and the tunnel insulating film and contains silicon nitride.