High-k Dielectric Trench Capacitor for Enhanced Capacitance Density
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Solution Overview
Problem
Trench capacitors in integrated passive devices (IPDs) have limited capacitance density due to the use of silicon oxide and silicon nitride dielectric layers, which restricts computing performance in mobile devices.
Innovation Solution
A trench capacitor design utilizing high κ dielectric materials such as hafnium oxide, zirconium oxide, or aluminum oxide for the dielectric layers, with a stacked configuration of electrodes and dielectric layers, increasing capacitance density beyond 800 nF/mm².
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If silicon oxide and silicon nitride dielectric layers are used in trench capacitors, then manufacturing process is simple and compatible with standard CMOS, but capacitance density is limited
Solution Approach 1:
The patent changes the dielectric material parameter from conventional silicon oxide/silicon nitride to high-k materials (hafnium oxide, zirconium oxide, aluminum oxide) with dielectric constants exceeding 10. This material parameter change enables capacitance density greater than 800 nF/mm² while maintaining compatibility with standard CMOS manufacturing processes through deposited thin film formation methods
Solution Approach 2:
The patent employs composite dielectric structures combining high-k dielectric layers with conventional dielectric layers. The high-k dielectric layer (hafnium oxide, zirconium oxide, or aluminum oxide) is deposited over the substrate and patterned to form the capacitor structure, creating a composite material system that achieves high capacitance density while remaining manufacturable
2Area of stationary object
If discretely mounted ceramic capacitors are used, then manufacturing is simple, but large PCB surface area is required
Solution Approach 1:
The patent merges the capacitor function directly into the semiconductor substrate, forming trench capacitors that are integrated with the CMOS circuitry. This consolidation eliminates the need for separate discrete ceramic capacitors and their associated PCB mounting, thereby reducing the overall PCB surface area while achieving the required capacitance functionality within the integrated circuit itself
3Use of energy by moving object
If conventional dielectric materials are used, then leakage current is acceptable, but power efficiency is reduced
Solution Approach 1:
The patent changes the dielectric material parameter to high-k materials (hafnium oxide, zirconium oxide, aluminum oxide) with dielectric constants greater than 10. This material parameter change reduces leakage current through the dielectric layer while improving power efficiency, as the high-k materials provide better electrical insulation properties compared to conventional silicon oxide and silicon nitride
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The high capacitance density enhances computing performance in mobile devices by improving power efficiency and reducing leakage current, while also reducing the size and cost of mobile devices.
Implementation Method 1
the trench capacitor has a capacitance density greater than 800 nF/mm²
Implementation Method 2
The capacitor dielectric layer includes a high κ dielectric material
Data Source
AI summary
Various embodiments of the present application are directed towards a trench capacitor with a high capacitance density. In some embodiments, the trench capacitor overlies the substrate and fills a trench defined by the substrate. The trench capacitor comprises a lower capacitor electrode, a capacitor dielectric layer, and an upper capacitor electrode. The capacitor dielectric layer overlies the lower capacitor electrode and lines the trench. The upper capacitor electrode overlies the capacitor dielectric layer and lines the trench over the capacitor dielectric layer. The capacitor dielectric layer comprises a high κ dielectric material. By using a high κ material for the dielectric layer, the trench capacitor may have a high capacitance density suitable for use with high performance mobile devices.