High Mobility Channel Leakage Reduction via Substrate Barrier
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Solution Overview
Problem
Semiconductor devices with high mobility channels face increased substrate leakage when in the off state due to the use of high mobility materials in the channel region.
Innovation Solution
A semiconductor device design where the high mobility channel is separated from doped regions by a portion of the substrate, creating a barrier to reduce current leakage, allowing the channel to enable high conductivity when in the on state without excessive leakage when in the off state.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high mobility materials are added to the channel region to increase conductivity in the on state, then conductivity is improved, but substrate leakage increases in the off state
Solution Approach 1:
The channel region is segmented into two distinct portions: a first portion with high mobility material for enhanced conductivity in the on state, and a second portion without high mobility material to prevent substrate leakage in the off state. This segmentation allows each portion to fulfill its specific function independently, resolving the contradiction between achieving high conductivity and preventing leakage.
Solution Approach 2:
Different regions of the channel are assigned different material properties: the first portion (e.g., under the gate) receives high mobility material to maximize conductivity where needed, while the second portion (e.g., near the drain) maintains original substrate properties to minimize leakage. This local differentiation of material quality enables simultaneous optimization of both conductivity and leakage prevention.
Data Source
AI summary
In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel.