High-Purity Alkyne Passivation for Selective Metal Deposition
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Solution Overview
Problem
Existing alkynes used for passivation of metallic surfaces in semiconductor manufacturing are contaminated with residual alkyl halides, moisture, and carboxylic acids, leading to incomplete passivation and loss of selectivity in selective deposition processes.
Innovation Solution
High-purity alkynes, substantially free of residual alkyl halides and carboxylic acids, are used to enhance passivation of metallic substrates, ensuring strong adsorption on 'naked' metallic surfaces and preventing undesired growth on non-metallic surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional alkynes are used for passivation of metallic surfaces, then the passivation process can be performed, but incomplete passivation occurs due to contamination with residual alkyl halides, moisture, and carboxylic acids, leading to loss of selectivity
Solution Approach 1:
The patent applies the extraction principle by removing harmful impurities (residual alkyl halides, moisture, and carboxylic acids) from the alkyne molecule through purification processes. This extraction of contaminants enables the alkyne to perform its passivation function completely and selectively on metallic surfaces without the interfering effects of impurities.
Solution Approach 2:
The patent changes the purity parameter of the alkyne from conventional levels to ultra-high purity levels (greater than 99.9%). This parameter change in purity eliminates the harmful effects of residual contaminants and enables reliable selective passivation of metallic surfaces, resolving the contradiction between achieving complete passivation and avoiding contamination.
2Manufacturing precision
If high-purity alkynes are used to achieve complete passivation, then selectivity in selective deposition processes is improved, but more complex purification processes are required
Solution Approach 1:
The patent applies preliminary action by performing purification of the alkyne before its use in selective deposition processes. By removing impurities in advance through methods such as distillation, filtration, or chromatography, the alkyne is prepared in a high-purity state that ensures complete passivation and high selectivity, while avoiding the need for complex in-situ purification during the deposition process.
3Productivity
If conventional alkynes with contaminants are used, then the deposition process can proceed, but incomplete passivation leads to undesired growth on non-metallic surfaces
Solution Approach 1:
The patent treats the high-purity alkyne as a consumable reagent that is used in controlled amounts for passivation. The alkyne adsorbs onto metallic surfaces forming a monolayer that prevents undesired growth. This disposable approach with purified reagents ensures both process efficiency and surface selectivity, as the pure alkyne provides complete passivation without contaminating non-metallic surfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The high-purity alkynes provide effective passivation of metallic surfaces, enabling reproducible selective deposition with reduced impurities, thereby improving the quality and completeness of thin film formation in semiconductor devices.
Implementation Method 1
high-purity alkynes, substantially free of residual alkyl halides and carboxylic acids, are used to enhance passivation of metallic substrates, ensuring strong adsorption on 'naked' metallic surfaces and preventing undesired growth on non-metallic surfaces
Implementation Method 2
CVD is a chemical process whereby precursors are used to form a thin film on a substrate surface. In a typical CVD process, the precursors are passed over the surface of a substrate (e.g., a wafer) in a low pressure or ambient pressure reaction chamber. The precursors react and/or decompose on the substrate surface creating a thin film of deposited material.
Implementation Method 3
The precursors react and/or decompose on the substrate surface creating a thin film of deposited material
Implementation Method 4
Plasma can be used to assist in reaction of a precursor or for improvement of material properties
Implementation Method 5
Volatile by-products are removed by gas flow through the reaction chamber
Data Source
AI summary
Methods of using high-purity alkynes substantially free of residual alkyl halides, water and/or carboxylic acids and their use (e.g., in formulations) for enhanced passivation of metallic substrates.