High-Purity Molybdenum Dichloride Dioxide for Low-Resistivity Films
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Solution Overview
Problem
Existing molybdenum dichloride dioxide precursors contain impurities, particularly silicon, which increase the resistivity of formed thin films, hindering the production of high-quality molybdenum-containing thin films.
Innovation Solution
High-purity molybdenum dichloride dioxide is produced with silicon content equal to or less than 400 wt ppm and other impurities below specific thresholds, achieved through a sublimation purification process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional molybdenum dichloride dioxide is used as a precursor, then the thin film formation process is simple, but the thin film resistivity increases due to silicon impurities
Solution Approach 1:
The patent applies parameter changes by modifying the purification conditions through controlled heating and cooling rates, vacuum pressure levels, and sublimation temperature gradients to achieve silicon impurity reduction to below 400 ppm while maintaining MoO2Cl2 purity above 99.99%
Solution Approach 2:
The patent utilizes phase transitions by employing sublimation purification where MoO2Cl2 transitions from solid to vapor phase and back to solid, exploiting the difference in volatility between MoO2Cl2 and silicon impurities to separate and purify the compound effectively
2Manufacturing precision
If high-purity molybdenum dichloride dioxide is produced through sublimation purification, then silicon content is reduced to below 400 ppm, but the production process becomes more complex
Solution Approach 1:
The patent applies the extraction principle by selectively removing silicon impurities from MoO2Cl2 through sublimation purification, separating the desired compound from harmful impurities based on their different vapor pressures and sublimation characteristics
Solution Approach 2:
The patent applies preliminary action by performing sublimation purification before the thin film formation process, pre-remove silicon impurities to below 400 ppm levels, and prepare high-purity MoO2Cl2 in advance to prevent resistivity issues during subsequent film deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The high-purity molybdenum dichloride dioxide effectively reduces impurity-related issues, enabling the formation of high-quality thin films with reduced resistivity.
Implementation Method 1
the high-purity molybdenum dichloride dioxide may be prepared by a preparation method including subjecting molybdenum dichloride dioxide to a sublimation purification process
Data Source
AI summary
The present invention relates to high-purity molybdenum dichloride dioxide and a preparation method therefor. In the molybdenum dichloride dioxide, the amount of silicon (Si) in the impurities is 400 wt ppm or less. High-purity molybdenum dichloride dioxide can be obtained due to a preparation process that includes sublimation purification.