Semiconductor Capacitor-Inductor Layout for High-Q RF Components
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Solution Overview
Problem
High-frequency integrated circuit devices face deterioration in electrical characteristics, such as Q value, due to parasitic impedance from wiring structures in capacitors and equivalent series resistance in inductors, which are exacerbated by the conductivity of the semiconductor substrate, leading to a trade-off between improving the Q values of vertical capacitors and pattern inductors.
Innovation Solution
An electronic component design with a semiconductor substrate featuring a conductor portion of higher conductivity than the substrate in the capacitor region, but lower conductivity in the inductor region, reducing eddy current loss and equivalent series resistance, while maintaining high Q values for both components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the conductivity of the semiconductor substrate is increased to reduce the equivalent series resistance of the vertical capacitor, then the Q value of the capacitor is improved, but the eddy current loss in the pattern inductor increases and the Q value of the inductor deteriorates
Solution Approach 1:
The semiconductor substrate is divided into a first region (capacitor region) with higher conductivity and a second region (inductor region) with lower conductivity. This local differentiation allows the capacitor region to have low equivalent series resistance while the inductor region maintains low eddy current loss, resolving the trade-off between capacitor and inductor Q values.
2Reliability
If wiring structures are used to connect the capacitor to ground, then the capacitor can be electrically connected to the ground, but parasitic impedance from the wiring structure is introduced and the Q value of the capacitor deteriorates
Solution Approach 1:
The harmful wiring structure connecting the capacitor to ground is removed entirely. Instead, the semiconductor substrate itself serves as the ground connection path, eliminating the parasitic impedance that would be introduced by external wiring structures while maintaining the necessary electrical connection to ground.
3Reliability
If the current path through the semiconductor substrate is lengthened to reduce the equivalent series resistance of the vertical capacitor, then the conductivity effect is enhanced, but the equivalent series resistance increases due to the longer path
Solution Approach 1:
The semiconductor substrate exhibits spatially varying conductivity with a first region having higher conductivity for the capacitor current path and a second region having lower conductivity for the inductor area. This local quality differentiation allows optimization of the capacitor's equivalent series resistance without compromising the inductor's performance, as each region is tailored to its specific functional requirement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Significantly reduces equivalent series resistance and eddy current loss, resulting in high Q values for both the inductor and capacitor, enhancing the electrical characteristics of the circuit device.
Implementation Method 1
reducing eddy current loss and equivalent series resistance
Implementation Method 2
The equivalent series resistance (ESR) of the vertical capacitor is determined by the conductivity of internal wiring or semiconductor substrate
Data Source
AI summary
An electronic component including: a semiconductor substrate; an insulator layer on a first surface of the semiconductor substrate; a plurality of conductor layers on and/or in the insulator layer; a dielectric layer on the first surface of the semiconductor substrate; a lower surface electrode on a second surface of the semiconductor substrate, wherein: at least a first conductor layer of the plurality of conductor layers is a wiring pattern, at least a second conductor layer of the plurality of conductor layers is a plate electrode paired with the semiconductor substrate or the lower surface electrode across the dielectric layer, and the semiconductor substrate has a first region that includes the dielectric layer and the plate electrode and a second region other than the first region; and a conductor portion with higher conductivity than the semiconductor substrate in the first region at a higher ratio than in the second region.


