High Refractive Index Connecting Element for Optoelectronic Semiconductor
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Solution Overview
Problem
Optoelectronic semiconductor components, particularly those using III-V compound semiconductors like AlInGaN, face high optical refractive indices that lead to total internal reflection and optical losses when trying to couple radiation out, and conventional connecting elements with low refractive indices exacerbate this issue, causing radiation to be trapped and reducing component lifetime.
Innovation Solution
A connecting element with a high optical refractive index, such as an optical brazing alloy, is used to mechanically connect the semiconductor layer sequence to a radiation-transmissive element, allowing efficient light coupling and reducing surface roughness effects, while having a low melting point for stable and low-temperature joining, and being composed of materials like ZnS, ZnSe, or chalcopyrites to minimize optical losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a conventional connecting element with low refractive index is used to connect the semiconductor layer sequence to the radiation-transmissive element, then the mechanical connection is stable, but optical losses increase due to total internal reflection at the interface
Solution Approach 1:
The patent changes the refractive index parameter of the connecting element from conventional low values to high values (≥1.8, preferably ≥2.0) to match the high refractive index of the semiconductor layer sequence (≥2.3). This parameter change eliminates total internal reflection at the interface and enables efficient light coupling out of the semiconductor component.
Solution Approach 2:
The connecting element is composed of composite materials with high refractive index, such as metal chalcogenides (ZnS, ZnSe, CdS, CdSe), chalcopyrites (CuInS2, CuInSe2), or perovskite structures. These composite materials simultaneously provide high refractive index for optical efficiency and low melting point for stable mechanical connection.
2Reliability
If high joining temperature is used to create stable mechanical connection between semiconductor layer sequence and radiation-transmissive element, then connection stability is improved, but component lifetime is reduced due to thermal damage
Solution Approach 1:
The connecting element utilizes phase transition from solid to liquid and back to solid during the joining process. The material is heated above its melting point to create a liquid state for flow and bonding, then cooled to solidify and form a stable mechanical connection. This phase transition enables strong bonding at lower temperatures compared to conventional high-temperature joining methods.
Solution Approach 2:
The patent changes the temperature parameter for joining from conventional high temperatures (>700°C) to low temperatures (400-600°C) by selecting connecting element materials with low melting points. This temperature reduction prevents thermal damage to the semiconductor layer sequence and extends component lifetime while maintaining connection stability.
3Productivity
If high refractive index material is used for the connecting element to improve light coupling, then optical efficiency is improved, but manufacturing complexity increases due to material selection constraints
Solution Approach 1:
The patent identifies specific composite material classes (metal chalcogenides, chalcopyrites, perovskites) that inherently possess high refractive index properties. By focusing on these material families with known crystal structures and growth characteristics, the patent reduces manufacturing complexity despite the specialized material requirements.
Solution Approach 2:
The patent establishes a refractive index threshold parameter (≥1.8, preferably ≥2.0) for selecting connecting element materials. This quantitative parameter provides a clear selection criterion that simplifies material choice and manufacturing process development, transforming a complex material selection problem into a parameter-based decision framework.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly reduces optical losses by enabling efficient light coupling out of the semiconductor component, increases the component's lifetime by using low-temperature joining, and maintains structural integrity through stable mechanical connections.
Implementation Method 1
The refractive indices of the connecting element and of the semiconductor layer sequence deviate from one another by at most 25% or by at most 15% or by at most 10% or by at most 5%. In this case, the refractive indices are related in particular to the peak wavelength of the radiation generated in the active layer.
Implementation Method 2
face high optical refractive indices that lead to total internal reflection and optical losses when trying to couple radiation out
Implementation Method 3
at least one of the main constituents or all of the main constituents has/have a melting point of at most 750 K or at most 700 K or at most 600 K or at most 550 C or at most 500 C
Data Source
AI summary
In at least one embodiment, the semiconductor component includes a semiconductor layer sequence with an active layer for generating an electromagnetic radiation. The semiconductor component includes a radiation-permeable element and a connecting element. The connecting element is layered in form and connects the radiation-permeable element and the semiconductor layer sequence to another mechanically. The connecting element is designed to be passed through by at least one part of the radiation generated in the active layer. A refractive index of the connecting means deviates from a refractive index of the semiconductor layer sequence by a maximum of 25%. The connecting element includes at least two principal components, which are solids at a temperature of 300 K. At least one of the principal components has a melting temperature of no more than 750 K.