High Side Driver Semiconductor Structure with Integrated Concave Capacitor
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor structures for high side drivers require separate regions for HV junctions and capacitors, leading to increased chip space and manufacturing costs due to the reduction in breakdown voltage near concave regions.
Innovation Solution
A semiconductor structure with a concave-shaped capacitor integrated into the HV junction, where the semiconductor region has the same ion-doping concentration as the substrate, forming a deep well with partially linked regions to maintain breakdown voltage and reduce chip area and manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a conductive capacitor structure is directly disposed on the deep N well of the HV junction, then the chip area is reduced, but the breakdown voltage of the P-well region near the concave region is largely reduced
Solution Approach 1:
The patent applies local quality by forming a semiconductor region with substantially the same ion-doped concentration as the substrate specifically near the concave region of the capacitor structure. This localized modification of doping concentration enhances the breakdown voltage in the critical area where the capacitor contacts the HV junction, without affecting other regions of the device.
Solution Approach 2:
The patent changes the ion-doping concentration parameter in the semiconductor region near the concave region to match the substrate concentration. This parameter change compensates for the electric field concentration effect at the concave region, thereby maintaining high breakdown voltage while allowing direct integration of the capacitor structure on the HV junction.
2Reliability
If the HV junction and HV capacitor structure are disposed in separated regions, then the breakdown voltage is maintained, but more chip space is needed and additional bonding metal is required
Solution Approach 1:
The patent merges the HV junction and HV capacitor structure into a single integrated structure by allowing the capacitor to be directly disposed on the deep N well of the HV junction. The concave-shaped capacitor structure is formed in the P-substrate, and the deep N well is formed in the P-substrate, creating a unified device that eliminates the need for separate regions and additional bonding metals.
3Reliability
If the HV junction and HV capacitor structure are disposed in separated regions, then the breakdown voltage is maintained, but manufacturing cost increases due to extra bonding metal
Solution Approach 1:
The patent merges the HV junction and HV capacitor structure into a single integrated structure that can be manufactured in one process flow. The capacitor structure is formed directly in the P-substrate, and the deep N well is formed in the same substrate, eliminating the need for separate fabrication steps and additional bonding metals, thereby reducing manufacturing cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated structure increases breakdown voltage near the concave region, reducing chip area and manufacturing costs while maintaining performance by eliminating the need for additional bonding metals.
Implementation Method 1
forming a semiconductor region having substantially the same ion-doped concentration as the substrate in the substrate near the concave region
Data Source
AI summary
A semiconductor structure of a high side driver includes an ion-doped junction. The ion-doped junction includes a substrate and a deep well. The deep well is formed in the substrate and has a first concave structure. The ion-doped junction includes a semiconductor region connected to the first concave structure of the deep well and having substantially the same ion-doping concentration as the substrate.