High Side Semiconductor Structure With Complementary Doped Wells
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Solution Overview
Problem
Increasing the reference withstanding voltage of high side semiconductor structures while simplifying the manufacturing process and maintaining unchanged operating voltage is a challenging task in semiconductor development.
Innovation Solution
The introduction of a doped well between two deep wells with complementary ion doping types, creating gap regions that increase the depletion region thickness and thus the reference withstanding voltage without altering the operating voltage or requiring additional manufacturing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the reference withstanding voltage is increased by traditional methods, then the breakdown voltage increases, but the manufacturing process becomes more complex requiring extra lithography steps
Solution Approach 1:
The patent divides the single deep well structure into multiple deep wells (first deep well and second deep well) with complementary doping types, interspersed with doped regions. This segmentation allows the breakdown voltage to be increased through the cumulative effect of multiple depletion regions rather than requiring a single extremely deep well, thereby avoiding additional lithography steps while achieving higher voltage withstand capability
Solution Approach 2:
The patent applies different doping types (N-type and P-type) to different deep wells and doped regions at specific locations. The first deep well has N-type doping, the second deep well has P-type doping, and doped regions are strategically placed between them. This local differentiation of doping qualities creates multiple depletion regions that collectively increase the reference withstanding voltage without complicating the overall manufacturing process
2Strength
If the reference withstanding voltage is increased, then the breakdown voltage increases, but the operating voltage must be changed
Solution Approach 1:
The patent uses complementary doping types in different deep wells (N-type in first deep well, P-type in second deep well) with doped regions positioned between them. This creates alternating N-P-N-P structures that generate multiple depletion regions. The local doping quality differentiation allows the reference withstanding voltage to be increased while the overall structure maintains compatibility with existing operating voltages through proper doping concentration control
Solution Approach 2:
Instead of increasing voltage withstand capability by deepening a single well (one-dimensional approach), the patent transitions to a multi-well structure with complementary doping (adding structural dimension). This dimensional change creates multiple depletion regions in series, increasing the reference withstanding voltage while maintaining operating voltage compatibility through the distributed nature of the voltage blocking across multiple junctions
3Device complexity
If a single deep well is used, then the structure is simple, but the reference withstanding voltage is limited
Solution Approach 1:
The patent segments the single deep well into multiple deep wells (first deep well with N-type doping, second deep well with P-type doping) interspersed with doped regions. This segmentation creates multiple depletion regions that collectively block higher voltages. The segmented structure achieves superior voltage withstand capability compared to a single deep well while maintaining reasonable structural simplicity through the regular alternating pattern
Solution Approach 2:
The patent creates a composite semiconductor structure with alternating N-type and P-type doped regions (first deep well, doped region, second deep well, doped region). This composite doping structure leverages the properties of both N-type and P-type semiconductors to create multiple P-N junctions, each contributing to the overall breakdown voltage. The composite structure achieves higher reference withstanding voltage while maintaining manufacturing simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases the reference withstanding voltage from 50V to 100V while maintaining the original operating voltage and avoiding extra manufacturing processes or materials, thereby enhancing the semiconductor structure's performance.
Implementation Method 1
The first deep well and the second deep well have identical type of ion doping. The type of ion doping of the first deep well and the second deep well is complementary with that of the doped well.
Implementation Method 2
creating gap regions that increase the depletion region thickness and thus the reference withstanding voltage
Data Source
AI summary
A high side semiconductor structure is provided. The high side semiconductor structure includes a substrate, a first deep well, a second deep well, a first active element, a second active element and a doped well. The first deep well and the second deep well are formed in the substrate, wherein the first deep well and the second deep well have identical type of ion doping. The first active element and the second active element are respectively formed in the first deep well and the second deep well. The doped well is formed in the substrate and is disposed between the first deep well and the second deep well. The doped well, the first deep well and the second deep well are interspaced, and the type of ion doping of the first deep well and the second deep well is complementary with that of the doped well.