High-Silicon Photocurable Composition for Low-Viscosity Etch Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing inkjet adaptive planarization (IAP) materials lack sufficient etch resistance in forming photo-cured layers, which is crucial for subsequent processing steps like etching and deposition.
Innovation Solution
A photocurable composition comprising a polymerizable material with a high silicon content, including silicon-containing monomers and optional acrylate monomers, designed to form a photo-cured layer with at least 15 wt% silicon and low viscosity, which can be cured under UV light to achieve high etch resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional photocurable materials are used in IAP, then the process can be performed, but the etch resistance of the photo-cured layer is insufficient
Solution Approach 1:
The patent employs composite materials by combining silicon-containing monomers with specific molecular weights (100-800 g/mol) with conventional photocurable materials. This composite approach enhances etch resistance through the silicon content (at least 15 wt%) while maintaining processability, directly resolving the contradiction between improved reliability and ease of manufacture.
Solution Approach 2:
The patent applies parameter changes by controlling the molecular weight range of silicon-containing monomers (100-800 g/mol) and adjusting their concentration (at least 15 wt% silicon content). These parameter optimizations enable the material to achieve high etch resistance while maintaining low viscosity and proper curing characteristics, balancing performance improvement with manufacturing simplicity.
2Reliability
If high silicon content monomers are used to improve etch resistance, then etch resistance increases, but viscosity may increase affecting jetting performance
Solution Approach 1:
The patent resolves this contradiction through precise parameter control: selecting silicon-containing monomers with molecular weights between 100-800 g/mol and incorporating them at concentrations providing at least 15 wt% silicon content. This parameter optimization achieves high etch resistance while maintaining viscosity below 20 mPa·s, ensuring both performance and jetting capability.
Solution Approach 2:
The patent applies local quality by using silicon-containing monomers with specific molecular weight ranges (100-800 g/mol) that provide etch resistance locally through silicon content while the overall composition maintains low viscosity. The selective incorporation of these monomers (at least 15 wt% silicon) creates localized enhancement of etch resistance without compromising the bulk flow properties needed for jetting.
3Reliability
If silicon-containing monomers with molecular weight 100-800 g/mol are used, then etch resistance and jetting performance are optimized, but the composition requires precise formulation
Solution Approach 1:
The patent manages formulation complexity through defined parameter ranges: silicon-containing monomers with molecular weights of 100-800 g/mol and silicon content of at least 15 wt%. These specified ranges provide clear formulation guidelines that achieve optimal etch resistance and jetting performance without requiring excessive precision, balancing performance with manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition provides a photo-cured layer with enhanced etch resistance, allowing for effective pattern transfer in the sub-100 nm range and stability for up to three months, suitable for nanoimprint lithography and inkjet adaptive planarization processes.
Implementation Method 1
The flat liquid layer is typically solidified under UV light exposure
Data Source
AI summary
A photocurable composition can comprise a polymerizable material and a photoinitiator, wherein the polymerizable material may comprise at least one silicon-containing monomer having a structure of formula (1)with R1, R2: —O—Si(CH3)3, alkyl, aryl, or alkylaryl; R3, R4: —O—Si(CH3)3, alkyl, aryl, or alkylaryl; R5: C1-C5-alkyl, aryl, alkylaryl; R6: —R5-X, or X, or —O—Si(CH3)3, or alkyl, or aryl, or alkylaryl; X: acrylate or methacrylate; and n: 0-4. The amount of silicon (Si) in the photocurable composition can be at least 15 wt % based on the total weight of the photocurable composition.