High Speed Memory Programmable Read Preamble
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Solution Overview
Problem
Current memory technologies, such as DRAM, face bandwidth issues that prevent direct substitution with FLASH memory in high-speed applications, despite FLASH offering advantages like lower power consumption and higher density.
Innovation Solution
The development of systems and methods that allow for the customization of preamble patterns in high-speed memory devices, such as RAM and FLASH modules, enabling updates post-manufacture to optimize performance based on the target environment, thereby addressing bandwidth limitations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If DRAM technology is used for high-speed memory operations, then data access speed is improved, but power consumption increases and density decreases
Solution Approach 1:
The patent implements dynamic preamble pattern adjustment where the memory device can switch between different preamble patterns (e.g., pattern A for high-speed mode, pattern B for high-density mode) based on operational requirements. This allows the system to optimize between speed and density dynamically rather than being fixed to one configuration.
Solution Approach 2:
The patent changes the preamble pattern parameter to resolve the contradiction. By modifying the preamble sequence (e.g., using longer preambles for density optimization or shorter preambles for speed optimization), the system can adjust performance characteristics without changing the fundamental memory architecture.
2Speed
If DRAM technology is used for high-speed memory operations, then data access speed is improved, but storage density decreases
Solution Approach 1:
The system dynamically selects between different preamble patterns based on whether high-speed access or high-density storage is the current priority. The memory controller can switch between preamble pattern A (optimized for speed) and preamble pattern B (optimized for density) depending on the operational context.
Solution Approach 2:
The preamble pattern is changed as a controllable parameter to balance speed and density requirements. Different preamble sequences are used to achieve different effective data rates, allowing the same physical memory to serve different density-speed trade-off requirements.
3Use of energy by moving object
If FLASH memory is used for high-speed applications, then power consumption is reduced and density is increased, but bandwidth is insufficient
Solution Approach 1:
The patent enables dynamic adjustment of preamble patterns in FLASH memory to optimize bandwidth performance. The system can switch between different preamble sequences based on data access patterns, allowing FLASH memory to achieve higher effective bandwidth when needed while maintaining its inherent low-power and high-density advantages.
Solution Approach 2:
The preamble pattern parameter is modified to enhance bandwidth performance in FLASH memory. By using specific preamble sequences and adjusting their timing and length, the system can overcome the inherent bandwidth limitations of FLASH while preserving its energy efficiency and density benefits.
4Ease of manufacture
If fixed preamble patterns are used in memory devices, then manufacturing is simplified, but adaptability to different environments is reduced
Solution Approach 1:
The patent transitions from static to dynamic preamble pattern configuration. The memory device can be programmed with different preamble patterns after manufacturing, allowing adaptation to various host systems and applications while maintaining a simple base manufacturing process.
Solution Approach 2:
Default preamble patterns are pre-programmed during manufacturing to ensure basic functionality, but the system also includes mechanisms to update these patterns beforehand or at runtime based on the target environment, combining manufacturing simplicity with operational flexibility.
Data Source
AI summary
The subject systems and/or methods relate to a high speed memory device that enables a preamble pattern to be updated after manufacture. A high speed memory device can include a FLASH module and a RAM module. The FLASH module can include an initial preamble pattern, wherein the initial preamble pattern is loaded during a power-up of the high speed memory. The RAM module can include a default preamble pattern, wherein the default preamble pattern is loaded after the power-up of the high speed memory. The initial preamble pattern or the default preamble pattern can be defined by a manufacture of the high speed memory or an OEM of the high speed memory. Additionally, the initial preamble pattern or the default preamble pattern can be updated with a customized preamble pattern based upon a target environment.