High Temperature Optoelectronic Isolator Using LTCC and GaN
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Solution Overview
Problem
Conventional optocouplers face significant degradation and performance decline at high temperatures, limiting their operating range and reliability in harsh environments such as those encountered in SiC-based power modules, which are needed for emerging applications like electric vehicles and renewable energy systems.
Innovation Solution
A novel packaging technique using a low temperature co-fired ceramic (LTCC) substrate enables the development of high temperature optoelectronic devices that can operate reliably above 250°C, incorporating group III-nitride materials like gallium-nitride and aluminum-gallium-nitride for LEDs and photodetectors, with advanced characterization methods to ensure stability and functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional optocouplers are used in high temperature environments, then device functionality is maintained at standard operating temperatures, but device reliability and performance degrade significantly above 100°C
Solution Approach 1:
The patent changes the material parameters of the optocoupler components by using wide bandgap semiconductor materials (GaN, AlGaN) instead of conventional materials. These materials have fundamentally different temperature-dependent properties, allowing operation at elevated temperatures up to 300°C while maintaining device reliability and performance characteristics.
Solution Approach 2:
The patent employs composite material structures combining wide bandgap semiconductor layers (GaN, AlGaN) with specific packaging materials that can withstand high temperatures. This composite approach creates an optocoupler device that maintains reliability in harsh thermal environments where conventional single-material designs fail.
2Temperature
If SiC-based power modules are used for high temperature operation, then power device capability is improved, but galvanic isolation system reliability becomes the limiting factor
Solution Approach 1:
The patent changes the operational temperature parameters of the galvanic isolation system by developing optocouplers that can operate reliably at 250-300°C. This enables the isolation system to match the high temperature capability of SiC power devices, removing the previous reliability bottleneck in high temperature power modules.
3Weight of stationary object
If LED-based optocouplers are used for high voltage isolation, then size and weight are reduced, but operating temperature is limited to below 100°C
Solution Approach 1:
The patent changes the thermal performance parameters of LED-based optocouplers by using wide bandgap semiconductor materials with superior thermal stability. This allows the lightweight optocoupler design to operate at temperatures up to 300°C, simultaneously achieving both weight reduction and high temperature operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for high temperature operation up to 300°C with increased power density, improved EMI immunity, and enhanced electrostatic discharge performance, addressing the limitations of conventional optocouplers and enabling reliable high temperature power modules.
Implementation Method 1
a low temperature co-fired ceramic substrate... enables the development of high temperature optoelectronic devices that can operate reliably above 250°C
Implementation Method 2
incorporating group III-nitride materials like gallium-nitride and aluminum-gallium-nitride for LEDs
Implementation Method 3
gallium-nitride and aluminum-gallium-nitride for LEDs
Implementation Method 4
gallium-nitride and aluminum-gallium-nitride for LEDs and photodetectors
Data Source
AI summary
A high temperature optoelectronic isolator for power electronics operating above 250 degrees Celcius.