3D High-Voltage Capacitor Layout to Reduce Field Concentration
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Solution Overview
Problem
Existing 3D capacitive structures face challenges in high voltage applications due to local increases in electrostatic field at geometrical singularities, limiting energy storage density and device reliability.
Innovation Solution
A capacitor design with a top electrode positioned below the peaks of protruding walls and a dielectric region extending between and above the electrodes, allowing for a large dielectric thickness near singularities, reducing the electrostatic field and enabling thinner protruding walls.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the curvature radius of rounded corners is increased to reduce electrostatic field concentration, then the robustness of the electrical component is improved, but the specific area for capacitance is reduced and energy storage density is limited
Solution Approach 1:
The patent applies local quality by differentiating the treatment of corner regions from the rest of the capacitive structure. Specifically, the curvature radius at corners is constrained to be less than the dielectric thickness (unlike conventional designs where it is greater), while the overall structure maintains rounded corners to balance electrostatic field distribution with space utilization. This localized optimization allows the corners to be sufficiently rounded for robustness while minimizing the impact on available capacitance area.
Solution Approach 2:
The patent changes the critical parameter of curvature radius from being greater than dielectric thickness (conventional) to being less than dielectric thickness (invention). This parameter inversion allows the structure to achieve both robustness through corner rounding and high energy storage density by maximizing the usable specific area, resolving the contradiction between these two requirements.
2Reliability
If thick protruding walls are used to reduce electrostatic field concentration at corners, then the robustness is improved, but the number of walls within the component is limited and specific area is reduced
Solution Approach 1:
The patent applies local quality by concentrating the electrostatic field mitigation features (corner rounding) at specific critical locations rather than increasing the thickness of all protruding walls uniformly. This allows the structure to maintain thin walls throughout most regions for high density while having sufficiently rounded corners for robustness, resolving the contradiction between wall thickness and energy storage density.
3Reliability
If thick dielectrics are used to meet high breakdown voltage requirements, then the robustness in high voltage applications is improved, but the specific area is further limited and energy storage density is reduced
Solution Approach 1:
The patent applies local quality by concentrating the dielectric thickness optimization at corner regions where electrostatic field concentration occurs. The dielectric thickness at corners is specifically optimized to be greater than the curvature radius, providing enhanced breakdown voltage capability precisely where it is most needed, while maintaining thinner dielectric in other regions to maximize specific area and energy storage density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances energy storage density, improves breakdown voltage, reduces leakage current, and increases device reliability for high-voltage applications.
Implementation Method 1
the presence of geometrical singularities (e.g. corners, edges) in a 3D capacitive structure leads to a local increase of the electrostatic field
Implementation Method 2
a dielectric region extending conformally over the bottom electrode and surrounding the top electrode
Data Source
AI summary
An electrical device for high-voltage applications and a method for obtaining an electrical device. The electrical device includes a capacitor having: a bottom electrode having a conductive structure, the conductive structure including a base surface and facing protruding walls extending upwards and having a highest surface; a top electrode having at least one conductive region arranged between the facing protruding walls and having a top surface, wherein the top surface of the at least one conductive region lies below or at the level of the highest surface of the protruding walls; and a dielectric region extending conformally over the bottom electrode and surrounding the top electrode, the capacitor being formed by the bottom and top electrodes separated by the dielectric region.