High Voltage Device Germanium Doping Boron Diffusion Control
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Solution Overview
Problem
High voltage devices face increased on-resistance due to undesirable diffusion of boron atoms during thermal processing, leading to longer inverse current channels and slower operation speeds.
Innovation Solution
Incorporating a germanium distribution region with a concentration higher than 1*10^13 atoms/cm2 to restrict the diffusion area of the boron distribution region, using ion implantation and thermal annealing to form a crystalline body region and inverse current channel, thereby controlling the diffusion of boron atoms and reducing on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If thermal processing is used to form the body region, then the device can be manufactured, but boron atoms diffuse undesirably causing increased on-resistance
Solution Approach 1:
The patent introduces a germanium distribution region with specific concentration ranges (1×10^13 to 1×10^16 atoms/cm²) to modify the thermal diffusion characteristics during body region formation. This parameter change in material composition restricts boron atom diffusion while maintaining manufacturability through standard thermal processing
Solution Approach 2:
The germanium distribution region acts as an intermediary layer between the drift region and the body region, mediating the thermal diffusion process. This intermediary structure controls boron atom distribution by providing a germanium-rich zone that limits unwanted diffusion while allowing controlled current flow
2Stability of the object's composition
If the inverse current channel length increases due to boron diffusion, then the device structure forms naturally, but the on-resistance increases and operation speed decreases
Solution Approach 1:
By introducing germanium atoms at controlled concentrations in the distribution region, the patent modifies the electrical characteristics of the inverse current channel. This parameter change reduces on-resistance and improves operation speed while maintaining the stability of the inverse current channel structure
Solution Approach 2:
The patent creates a composite structure combining silicon-based semiconductor material with germanium-doped regions. This composite material approach allows the inverse current channel to maintain its structural stability while achieving improved electrical performance through the germanium-enhanced regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the on-resistance of high voltage devices, improving their operation speed by limiting boron atom diffusion and enhancing crystallization, resulting in more efficient current flow.
Implementation Method 1
using ion implantation and thermal annealing to form a crystalline body region and inverse current channel
Implementation Method 2
during a thermal process in manufacturing the high voltage device 100, these boron atoms may diffuse undesirably due to lattice defects
Implementation Method 3
after the plurality of boron atoms have been implanted in the well, transforming the germanium distribution region to a crystalline region via a thermal annealing process
Implementation Method 4
transforming the germanium distribution region to a crystalline region via a thermal annealing process, and forming the body region and the inverse region within the body region
Data Source
AI summary
A high voltage device includes: a crystalline silicon layer, a well, a body region, a gate, a source, and a drain. The body region has a P-type conductivity type, and is formed in the well. The gate is located on and in contact with the well. The source and the drain have an N-type conductivity type, and are located below, outside, and at different sides of the gate, and are located in the body region and the well respectively. An inverse region is defined in the body region between the source and the well, to serve as an inverse current channel in an ON operation. The inverse region includes a germanium distribution region which has a germanium atom concentration higher than 1*1013 atoms/cm2. Adrift region is defined in the well, between the body region and the drain, to serve as a drift current channel in an ON operation.