High-Voltage Semiconductor Layout for Multi-Domain Isolation
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Solution Overview
Problem
There is a need to improve the device characteristics of high-voltage semiconductor devices with minimal additional effort while reducing chip area without compromising performance, particularly in integrating circuits with different voltage domains.
Innovation Solution
A semiconductor device with a transition portion for radial field distribution, featuring a semiconductor layer with an inner portion, an outer portion, and a transition portion, and trench isolation structures that segment these regions to facilitate easy interfacing and reduce critical interactions between integrated electronic elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If circuits are integrated across different voltage domains to reduce chip area, then chip area is reduced, but critical interactions such as crosscurrents and crosstalk increase
Solution Approach 1:
The semiconductor layer is divided into distinct inner and outer portions separated by a transition portion. Trench isolation structures further segment these portions into discrete regions, allowing circuits operating at different voltages to be integrated on the same chip while preventing harmful interactions between them. This segmentation enables area reduction through integration while maintaining electrical isolation.
2Adaptability or versatility
If high-voltage and low-voltage circuits are integrated on the same chip, then device functionality is improved, but device complexity increases
Solution Approach 1:
Different regions of the semiconductor layer are assigned different electrical characteristics and functions. The inner portion accommodates high-voltage circuits while the outer portion accommodates low-voltage circuits, with the transition portion providing gradual field distribution. This local differentiation allows multi-voltage functionality to be integrated without requiring completely separate device structures, thereby managing complexity.
Solution Approach 2:
The transition portion acts as an intermediary region between the inner high-voltage portion and the outer low-voltage portion. It provides gradual field distribution and serves as a buffer zone that facilitates the integration of different voltage domains while managing the complexity of voltage transitions and isolation requirements.
3Object-generated harmful factors
If trench isolation structures are used to segment regions, then critical interactions are reduced, but manufacturing complexity increases
Solution Approach 1:
Trench isolation structures are used to segment the semiconductor layer into distinct regions for high-voltage and low-voltage circuits. These trenches provide physical and electrical isolation that reduces critical interactions such as crosscurrents and crosstalk. While the trenches add manufacturing steps, they are formed using standard semiconductor fabrication processes, making the increased complexity manageable and worthwhile given the performance benefits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for efficient integration of electric elements across different voltage domains, reducing chip area and minimizing crosscurrents and crosstalk, while maintaining high-voltage blocking capabilities.
Implementation Method 1
The first electric element is configured to at least temporarily block a voltage applied between the first doped region and the second doped region
Implementation Method 2
A trench isolation structure extends from a first surface into the semiconductor layer and segments at least one of the inner portion, the transition portion, and the outer portion
Data Source
AI summary
A semiconductor device includes a semiconductor layer with an inner portion, an outer portion laterally surrounding the inner portion, and a transition portion laterally surrounding the inner portion and separating the inner portion and the outer portion. A first electric element includes a first doped region formed in the inner portion and a second doped region formed in the outer portion. The first electric element is configured to at least temporarily block a voltage applied between the first doped region and the second doped region. A trench isolation structure extends from a first surface into the semiconductor layer and segments at least one of the inner portion, the transition portion, and the outer portion.