High-Voltage Detection Circuit Layout for ESD-Robust Operation
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Solution Overview
Problem
Semiconductor devices face challenges in withstanding high-voltage fluctuations and maintaining ESD robustness, particularly in high-power applications where input and output ports are vulnerable to momentary large voltage and current variations, leading to potential damage and reduced reliability.
Innovation Solution
The development of high-voltage semiconductor devices with controllable depletion-mode structures, including ultra-lightly-doped regions and embedded P-type buried layers, enhances breakdown voltage and ESD resistance by isolating vulnerable PN junctions and reducing electric field variations, thereby improving the devices' ability to withstand high voltages and ESD events.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If semiconductor devices are made with increasing precision to achieve fast computation and lightweight products, then computation speed and product weight are improved, but the devices become more fragile and vulnerable to high-voltage fluctuations
Solution Approach 1:
The patent implements ESD protection circuits and voltage clamping mechanisms that are pre-configured to cushion against high-voltage fluctuations before they can damage the precise semiconductor components. These protection structures act as a buffer, absorbing voltage spikes and preventing them from reaching the vulnerable high-precision circuitry.
2Power
If input and output ports are designed to handle high-power applications with switches, inductors, and capacitors, then power handling capability is improved, but the ports become vulnerable to momentary large fluctuations in voltage and current
Solution Approach 1:
The patent introduces intermediary protection circuits between the high-power input/output ports and the internal semiconductor devices. These intermediary structures include ESD protection diodes and voltage clamping circuits that mediate the interaction between external high-power signals and internal sensitive circuits, blocking harmful voltage and current fluctuations while allowing legitimate power transmission.
3Ease of manufacture
If conventional semiconductor structures are used to meet specification requirements, then manufacturing simplicity is maintained, but ESD robustness and high-voltage tolerance are insufficient
Solution Approach 1:
The patent employs a nested structure where ESD protection circuits are integrated within the existing semiconductor device architecture. The protection circuits are embedded at multiple levels - from package level to chip level - creating a hierarchical defense system that maintains manufacturing simplicity while significantly enhancing ESD robustness through layered protection mechanisms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design significantly reduces gate leakage and enhances ESD robustness, protecting the devices from damage during high-voltage and ESD events, ensuring reliable operation in demanding environments.
Implementation Method 1
reducing electric field variations
Implementation Method 2
enhances breakdown voltage and ESD resistance
Data Source
AI summary
Disclosed is a high-voltage device with ESD robustness. The high-voltage device is formed on a surface of a semiconductor substrate of a first type. A deep well of a second type opposite to the first type is formed on the surface. A filed isolation layer on the surface separates a drain active region from a source active region, and a control gate on top of the field isolation layer serves as a gate electrode of the high-voltage device. A first well of the second type at least partially overlaps the source active region, extends below the field isolation layer and at least partially overlaps the control gate. A buried layer of the first type at a bottom of the deep well has an extensive portion below the control gate. The deep well provides a conductive channel allowing current to flow from the drain active region to the source active region.