High-Voltage FET Switch Topology for Cryogenic Quantum Control
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Solution Overview
Problem
Conventional semiconductor switches, such as those using CMOS technology, are limited to 5 volts and fail to meet the high-voltage requirements of quantum computing applications, which necessitate higher voltage operation, noise management, and low-temperature functionality.
Innovation Solution
A high-voltage semiconductor switch comprising multiple FET circuits and voltage-shifting transistors, configured in subcircuits to operate at voltages exceeding +/−5V, with capacitors for noise mitigation and integrated into a semiconductor material for monolithic integration, enabling operation in cryogenic environments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional CMOS technology is used, then manufacturing simplicity is maintained, but voltage capability is limited to 5 volts
Solution Approach 1:
The voltage shifting transistor is segmented into multiple FET circuits (first FET circuit with first and second FETs, third FET, and fourth FET) that work together to achieve high voltage operation. Each FET circuit handles a portion of the voltage shifting function, allowing the overall system to exceed the 5-volt limit of conventional CMOS while maintaining compatibility with standard manufacturing processes.
2Reliability
If higher voltages are used to meet quantum computing requirements, then operational capability is improved, but noise increases
Solution Approach 1:
The voltage shifting transistor acts as an intermediary between the control gate and the high-voltage switching elements. It transforms the low-voltage control signal into appropriate high-voltage levels for the switching FETs, enabling high-voltage operation while maintaining precise control and minimizing noise generation through controlled voltage transformation rather than direct high-voltage switching.
3Reliability
If voltage-shifting transistors are added to achieve high-voltage operation, then voltage capability is improved, but device complexity increases
Solution Approach 1:
The voltage shifting transistor and its constituent FET circuits serve multiple functions simultaneously: they perform voltage shifting to enable high-voltage operation, provides control signal transformation, and integrate with the switching subcircuits to achieve both high-voltage capability and low-temperature operation. This multi-functionality reduces the need for separate dedicated circuits for each function.
4Manufacturing precision
If monolithic integration is implemented, then manufacturing precision is improved, but adaptability to different voltage requirements decreases
Solution Approach 1:
The circuit incorporates dynamically controllable elements including the voltage shifting transistor that can adjust voltage levels based on control signals, and switching subcircuits that can be enabled or disabled to adapt to different voltage requirements. The FET circuits can operate in different configurations (series/parallel) to provide adaptable voltage and current handling capabilities while maintaining monolithic integration.
Data Source
AI summary
A high-voltage semiconductor switch is provided. The high-voltage semiconductor switch comprises one or more switch subcircuits, wherein each switch subcircuit may comprise one or more FET circuits and voltage-shifting transistor. The high-voltage semiconductor switch may be configured based on operational and environmental requirements, such as those of a quantum computing system, wherein the high-voltage switch may be located in a cryostat or vacuum chamber.