High-Voltage Pump Regulator with Independent Rise and Fall Time Control
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Solution Overview
Problem
Existing integrated circuits face challenges in regulating on-chip high-voltage generation, particularly in controlling rise and fall times of voltage levels for MOSFET transistors, due to the interaction of multiple parameters which are difficult to manage with a single control parameter.
Innovation Solution
A regulator circuit with a multipath control system that separates the control of rise-time and fall-time parameters through distinct current paths, allowing independent regulation of load voltage levels to match the characteristics of different loads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single control parameter is used to regulate high-voltage pump output, then the circuit complexity is reduced, but the ability to independently control rise time and fall time parameters deteriorates
Solution Approach 1:
The control circuit is segmented into two independent control paths: a first control path for regulating rise time parameters and a second control path for regulating fall time parameters. This segmentation allows each path to independently control its respective parameter without interference, resolving the contradiction between circuit simplicity and independent parameter control capability.
2Adaptability or versatility
If multiple control parameters are used to independently control rise and fall times, then the adaptability to different loads is improved, but the device complexity increases
Solution Approach 1:
The control circuit is divided into separate control paths for rise time and fall time parameters. Each path contains appropriate control elements that can be independently adjusted, enabling adaptability to different load requirements while maintaining a relatively simple overall structure through functional separation.
Solution Approach 2:
The control circuit incorporates dynamic control capabilities where the first and second control paths can independently adjust their respective parameters in response to different load conditions, providing the necessary adaptability without requiring a completely complex reconfiguration of the entire circuit.
3Productivity
If the load voltage level is rapidly changed, then the productivity of voltage generation is improved, but the reliability of MOSFET operation deteriorates due to uncontrolled rise and fall times
Solution Approach 1:
The control circuit performs preliminary regulation of rise time and fall time parameters before the actual voltage transition occurs. By pre-controlling these parameters through the separate control paths, the circuit ensures that voltage changes occur at safe, controlled rates that protect MOSFET reliability while still achieving rapid voltage generation when needed.
Solution Approach 2:
The control circuit incorporates feedback mechanisms that monitor the actual rise and fall times and adjust the control paths accordingly. This feedback ensures that voltage transitions remain within safe limits for MOSFET operation while maximizing the speed of voltage generation, thus maintaining both reliability and productivity.
Data Source
AI summary
A regulator for regulating the output from a high-voltage pump, Vpump, to provide a regulated load voltage, Vpp, to a load in MOSFET integrated circuits. The regulator includes a MOSFET switch which when enabled in a first state connects Vpp to the integrated circuit voltage level, Vcc, and which when disabled in a second state allows Vpp to be driven to levels greater than Vcc. The regulator includes a multipath control circuit for controlling the switch state and for controlling Vpp. A first current path, Iramp, controls the rise-time parameters of Vpp and a second current path, Idis, controls the fall-time parameters of Vpp. The rise-time parameters and the fall-time parameters are separately controlled.