High Voltage Resistor PIN Diode Isolation Breakdown
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Solution Overview
Problem
Conventional high voltage resistors suffer from device breakdown issues due to limited breakdown voltage, which is constrained by doping concentration and P/N junction limitations, making them inadequate for applications requiring high voltage handling.
Innovation Solution
A semiconductor device fabrication method involving the formation of a PIN diode structure with a lightly-doped intrinsic region between heavily doped wells, and electrical biasing of a high-voltage doped well to a midpoint voltage, allowing the device to tolerate higher voltage differences without breakdown, while maintaining existing process compatibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a P/N junction is used to sustain breakdown voltage in conventional high voltage resistors, then the device can function as a resistor, but the breakdown voltage is limited by doping concentration and cannot achieve sufficiently high voltages
Solution Approach 1:
The patent changes the fundamental parameter of the junction structure from a simple P/N junction to a P/I/N junction by introducing an intrinsic region. This parameter change in the doping profile (adding an undoped or lightly-doped intrinsic layer between the P and N regions) directly increases the breakdown voltage capability without requiring extreme doping concentration optimization, thereby resolving the contradiction between reliability and device complexity.
2Reliability
If the isolation structure thickness is increased to prevent breakdown, then the breakdown voltage increases, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
Instead of changing the geometric parameter of isolation structure thickness, the patent changes the electrical parameter by introducing the intrinsic region in the doped wells. This achieves higher breakdown voltage through electrical structure optimization rather than mechanical/geometric changes, maintaining ease of manufacture while improving reliability.
3Ease of manufacture
If conventional high voltage resistor structures are used, then the fabrication process is simple, but the device breaks down before reaching sufficiently high voltages
Solution Approach 1:
The patent modifies the doping parameter profile by introducing an intrinsic region between P and N doped wells, creating a P/I/N junction. This parameter change in the semiconductor structure achieves higher breakdown voltage while remaining compatible with standard semiconductor fabrication processes, thus maintaining ease of manufacture while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly enhances the breakdown voltage of high voltage resistors, enabling them to handle voltages up to 730 volts without device failure, while maintaining compatibility with existing fabrication processes and avoiding the need for increased isolation structure thickness.
Implementation Method 1
conventional high voltage resistors may rely on using a P/N junction to sustain a breakdown voltage. Junction breakdown is limited by doping concentration
Implementation Method 2
the intrinsic region is disposed between the first and second doped wells
Data Source
AI summary
Provided is a high voltage semiconductor device that includes a PIN diode structure formed in a substrate. The PIN diode includes an intrinsic region located between a first doped well and a second doped well. The first and second doped wells have opposite doping polarities and greater doping concentration levels than the intrinsic region. The semiconductor device includes an insulating structure formed over a portion of the first doped well. The semiconductor device includes an elongate resistor device formed over the insulating structure. The resistor device has first and second portions disposed at opposite ends of the resistor device, respectively. The semiconductor device includes an interconnect structure formed over the resistor device. The interconnect structure includes: a first contact that is electrically coupled to the first doped well and a second contact that is electrically coupled to a third portion of the resistor located between the first and second portions.