High-Voltage Semiconductor Device With Concentration Modulated Region
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Solution Overview
Problem
Current high-voltage semiconductor devices face limitations in achieving sufficient breakdown voltage, necessitating further enhancement to meet industry requirements.
Innovation Solution
Incorporating a concentration modulated region of the same conductive type and dopant as the insulating buried layer but with a lower doped concentration, disposed under the drain region, to reduce electric field intensity and enhance breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the lateral electric field is reduced by conventional structures (DDDMOS, LDMOS), then the breakdown voltage is increased, but the breakdown voltage is still insufficient to meet industry requirements
Solution Approach 1:
The patent introduces concentration modulated regions with varying dopant concentrations within the buried layer to create localized electric field adjustments. By having different dopant concentrations in different regions of the buried layer, the electric field distribution is optimized locally to achieve higher overall breakdown voltage while meeting industry requirements.
Solution Approach 2:
The patent modifies the dopant concentration parameter within the buried layer by introducing concentration modulated regions. This parameter change creates a non-uniform dopant distribution that optimizes the electric field profile, enabling the breakdown voltage to exceed conventional structures and meet industry requirements.
2Reliability
If the dopant concentration in the buried layer is reduced to lower electric field intensity, then the breakdown voltage increases, but the manufacturing complexity increases
Solution Approach 1:
The patent segments the buried layer into regions with different dopant concentrations (concentration modulated regions). This segmentation allows the electric field to be controlled in a stepwise manner, achieving high breakdown voltage through multiple moderate-concentration regions rather than a single low-concentration region, thereby reducing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases the breakdown voltage of high-voltage semiconductor devices by reducing electric field intensity, improving device performance and reliability.
Implementation Method 1
the at least one concentration modulated region includes the same conductive type as that of the insulating buried layer, the same dopant as that of the insulating buried layer and relative lower doped concentration than that of the insulating buried layer. Thus, the at least one concentration modulated enables to effectively reduce the electric field intensity under the drain region
Data Source
AI summary
A high-voltage semiconductor device includes a substrate, a first insulating structure, a gate, a drain region, a source region and a doped region. The substrate has a first conductive type, and the first insulating structure is disposed on the substrate. The drain region and the source region are disposed in the substrate. The source region has a first portion and a second portion. The first portion has the second conductive type and the second portion has the first conductive type. The gate is disposed on the substrate, between the source region and the drain region to partially cover a side of the first insulating structure. The doped region is disposed in the substrate and has a first doped region and a second doped region, and the first doped region and the second doped region both include the first conductive type and separately disposed under the first insulating structure.