High Voltage Semiconductor Doped Regions and Isolation Structures
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Solution Overview
Problem
The existing manufacturing processes for high voltage semiconductor devices are costly and inflexible, as they require specific grade and drift regions to achieve desired breakdown voltages, limiting the ability to produce devices with varying specifications efficiently.
Innovation Solution
A method involving the formation of doped regions with specific conductive types and isolation structures in a semiconductor substrate, where the distance between these regions is controlled to adjust the breakdown voltage, allowing for the production of high voltage devices with different specifications by replacing traditional grade and drift regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional grade and drift regions are used to achieve desired breakdown voltages, then device reliability is improved, but manufacturing cost increases and production flexibility decreases
Solution Approach 1:
The patent changes the geometric parameters of the device structure by introducing an offset between the gate electrode and source/drain regions, and by creating asymmetric junction depths. This parameter modification allows the breakdown voltage to be controlled through dimensional adjustments rather than requiring complex doping profiles, thereby reducing manufacturing cost while maintaining reliability
Solution Approach 2:
The patent segments the source and drain regions into multiple portions with different doping concentrations and depths. By dividing the traditionally uniform source/drain structure into segmented regions with varying properties, the device achieves enhanced breakdown voltage characteristics without requiring the complex grade and drift region structures, simplifying the manufacturing process
2Reliability
If traditional grade and drift regions are formed to achieve desired breakdown voltages, then device reliability is improved, but production time increases
Solution Approach 1:
The patent performs preliminary doping of the source and drain regions before gate electrode formation, establishing the segmented doping structure in advance. This preliminary action eliminates the need for subsequent complex doping steps to create grade and drift regions, significantly reducing production time while maintaining the breakdown voltage characteristics through the pre-established asymmetric structure
Solution Approach 2:
The patent inverts the conventional sequence and approach by using geometric asymmetry and segmented doping as the primary mechanism for achieving breakdown voltage control, rather than relying on the traditional method of creating gradual doping profiles through multiple diffusion steps. This inversion of the design approach simplifies the process and reduces production time
3Reliability
If specific grade and drift regions are required for high voltage devices, then device performance is improved, but manufacturing flexibility and adaptability decrease
Solution Approach 1:
The patent introduces dynamic adjustability to the device structure by varying the offset distance between the gate electrode and source/drain regions, and by adjusting the doping concentrations and depths of the segmented source/drain portions. These dynamic parameters can be easily modified during manufacturing to produce devices with different breakdown voltage specifications, greatly enhancing production flexibility and adaptability
Solution Approach 2:
The patent creates a universal device structure that can serve multiple voltage requirements by using the segmented source/drain configuration with adjustable geometric parameters. The same basic structure can be adapted to produce devices with different breakdown voltages by simply adjusting the offset distances and doping profiles, making the manufacturing process versatile and adaptable to various product specifications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs, simplifies mask design, and shortens production time while enabling the production of devices with tailored breakdown voltages, enhancing production yield and flexibility.
Implementation Method 1
forming a first doped region having a first conductive type in the substrate. At least two second doped regions having a second conductive type are formed in the substrate
Implementation Method 2
a distance between the aforementioned first doped region and one of the aforementioned second doped regions is about 0.1-3 micrometers... controlling the distance to adjust the breakdown voltage
Data Source
AI summary
The invention is directed to a method for manufacturing a high voltage device. The method comprises steps of providing a substrate and then forming a first doped region having a first conductive type in the substrate. At least two second doped regions having a second conductive type are formed in the substrate, wherein the second doped regions are located adjacent to both sides of the first doped region respectively, and the first doped region is separated from the second doped regions with an isolation region. A gate structure is formed on the substrate between the second doped regions and a source/drain region having the second doped region is formed in the substrate adjacent to both sides of the gate structure.