High Voltage Semiconductor Device With Field Plate Structures
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Solution Overview
Problem
Existing high voltage semiconductor devices are inadequate in terms of breakdown voltage and parasitic capacitance, necessitating improvements to meet industry requirements.
Innovation Solution
The implementation of multiple field plate structures with varying heights is achieved by strategically arranging electrode structures and insulating layers, reducing parasitic capacitance and increasing breakdown voltage without increasing the lateral distance between the gate electrode and the drain.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a drift region is disposed in the transistor structure to increase breakdown voltage, then the breakdown voltage is improved, but the lateral distance between gate electrode and drain increases
Solution Approach 1:
The patent introduces field plate structures with different heights (first height and second height) to create a three-dimensional electric field distribution. This vertical dimensionality change allows the electric field to be managed in the height direction rather than requiring increased lateral distance, thus maintaining compact device footprint while achieving high breakdown voltage
Solution Approach 2:
The gate structure is segmented into multiple field plate structures with different heights. The first field plate structure has a first height and the second field plate structure has a second height, allowing different regions to handle different electric field strengths. This segmentation enables optimized electric field distribution without increasing overall device dimensions
2Strength
If the gate electrode is extended above the isolation structure to form a field plate, then the surface electric field at the gate end is dispersed, but the parasitic capacitance increases
Solution Approach 1:
Different field plate structures are positioned at specific locations with different heights to create localized electric field management. The first field plate structure with first height addresses electric field dispersion at one location, while the second field plate structure with second height addresses another location, optimizing both field dispersion and capacitance control locally
Solution Approach 2:
The patent changes the height parameter of field plate structures to optimize performance. By having field plate structures with different heights (first height and second height), the electric field distribution and capacitance characteristics can be tuned to achieve both good field dispersion and low parasitic capacitance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability and performance of high voltage semiconductor devices by significantly increasing breakdown voltage and reducing parasitic capacitance, while maintaining device compactness.
Implementation Method 1
the surface electric field at the end of the gate may be dispersed
Implementation Method 2
effectively reduce the parasitic capacitance and increase breakdown voltage
Data Source
AI summary
The present disclosure provides a high voltage semiconductor device includes a substrate, a first well region, a second well region, a source, a drain, a first electrode structure and a second electrode structure. The first well region and the second well region are disposed in the substrate, and which includes a first conductive type and a second conductive type which are complementary with each other. The source and the drain are respectively disposed within the first well region and the second well region. The first electrode structure and the second electrode structure are both disposed on the substrate, and the distance between the top surface of an electrode of the first electrode structure and the top surface of the substrate includes a first height and a second height which are different from each other.