High-Voltage Semiconductor Device With Vertical Field Plate
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Solution Overview
Problem
Conventional high-voltage semiconductor devices face challenges with increased on-resistance and size due to the punch-through effect, particularly in P-type devices, which limits their performance and efficiency.
Innovation Solution
A high-voltage semiconductor device structure is developed with a substrate, isolation structure, gate structure separated from the isolation by a distance, and a metal electrode extending above the isolation structure, along with source and drain regions electrically isolated from the metal electrode, to enhance charge balance and prevent breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the channel length of the transistor is increased to prevent the punch-through effect, then the device reliability is improved, but the chip area and on-resistance increase
Solution Approach 1:
The patent introduces a vertical dimension by extending the metal electrode above the isolation structure, creating a three-dimensional field plate configuration. This vertical extension allows the electric field to be distributed in the vertical direction rather than requiring a longer horizontal channel, thus preventing punch-through while maintaining a compact chip area.
Solution Approach 2:
The metal electrode acts as an intermediary element that modifies the electric field distribution between the gate and the drain regions. By extending the metal electrode above the isolation structure, it serves as a field plate that controls the electric field, preventing charge accumulation at the drain junction and eliminating the need for a longer channel length.
2Reliability
If the channel length of the transistor is increased to prevent the punch-through effect, then the device reliability is improved, but the on-resistance increases
Solution Approach 1:
The vertical extension of the metal electrode above the isolation structure creates a three-dimensional field plate that controls the electric field in the vertical direction. This allows sufficient electric field control to prevent punch-through without requiring a longer horizontal channel, thereby maintaining lower on-resistance.
Solution Approach 2:
The metal electrode serves as a field plate intermediary that modifies the electric field distribution. By extending above the isolation structure, it prevents charge accumulation at the drain junction through vertical field control, enabling shorter channel lengths and thus lower on-resistance while maintaining device reliability.
3Reliability
If the channel length is increased to prevent punch-through in P-type devices, then the punch-through effect is suppressed, but the device size and on-resistance increase
Solution Approach 1:
The patent employs a vertical field plate structure by extending the metal electrode above the isolation structure. This three-dimensional configuration controls the electric field vertically, preventing punch-through in P-type devices without requiring increased horizontal channel length, thus maintaining compact device dimensions.
Solution Approach 2:
The metal electrode functions as a field plate intermediary that redistributes the electric field. By extending above the isolation structure, it provides vertical field control that suppresses punch-through effects in P-type devices while avoiding the need for larger device sizes associated with longer channels.
Data Source
AI summary
High-voltage semiconductor devices are provided. The high-voltage semiconductor device includes a substrate and an isolation structure in the substrate. The high-voltage semiconductor device includes a gate structure disposed on the substrate, wherein the gate structure is separated from the isolation structure by a distance. The high-voltage semiconductor device also includes a metal electrode disposed on the gate structure, wherein the metal electrode extends to directly above the isolation structure. The high-voltage semiconductor device further includes an interconnection structure including the lowest metal layer, wherein the metal electrode is between the lowest metal layer and the gate structure. Methods of manufacturing the high-voltage semiconductor device are also provided.