High-Voltage Switch Structure With Doped Regions for Breakdown Control
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Solution Overview
Problem
The manufacturing of low power integrated circuits (IC) components is complicated by the need to handle both low voltage and high voltage conditions, leading to increased complexity and reduced yield due to different manufacturing processes required for each.
Innovation Solution
A switch device design incorporating a P-type substrate, N-wells, shallow trench isolation, and doped regions with varying doping concentrations to enhance high voltage capability and durability, allowing operation under high voltage conditions without requiring a high voltage manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If components are manufactured using a low voltage process to reduce cost, then manufacturing cost is reduced, but the device cannot endure high voltages
Solution Approach 1:
The patent implements local quality by creating different doping concentration regions within the same device structure. Specifically, it uses a first doping concentration for the channel region and a second doping concentration (higher than the first) for the drain extension region. This localized variation in doping quality allows the device to maintain low voltage operation characteristics in the channel while achieving high voltage endurance in the drain region, all within a single low voltage manufacturing process.
Solution Approach 2:
The patent applies parameter changes by varying the doping concentration parameter across different regions of the device. The channel region maintains a lower doping concentration optimized for low voltage operation, while the drain extension region uses a higher doping concentration to withstand high voltage stress. This parameter variation enables the device to function in both low voltage and high voltage modes without requiring separate manufacturing processes.
2Reliability
If components are manufactured in a different process for high voltage, then high voltage endurance is improved, but manufacturing process complexity increases and yield decreases
Solution Approach 1:
The patent merges the low voltage and high voltage device requirements into a single unified structure that can be manufactured using one low voltage process. By integrating the channel region with low doping concentration and the drain extension region with high doping concentration into one continuous device architecture, the patent eliminates the need for separate high voltage manufacturing processes, thereby reducing process complexity while maintaining both low voltage performance and high voltage endurance.
Solution Approach 2:
The patent creates a universal device structure that serves multiple functions: it operates as a low voltage device during normal operation and as a high voltage device when needed. The single device structure with varying doping concentrations achieves both low voltage efficiency and high voltage durability, making the manufacturing process universally applicable without requiring different processes for different voltage requirements.
Data Source
AI summary
A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.