High-voltage glitch-suppresssed semiconductor switch for quantum object confinement apparatus
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Solution Overview
Problem
Existing electrical switching circuits, such as those used in quantum computers, face limitations due to high operational voltages and stringent requirements like noise and delay, which traditional semiconductor switches cannot meet, especially when operating in environments like cryogenic conditions.
Innovation Solution
A high-voltage semiconductor switch is designed with a transmission gate comprising two back-to-back transistors of the same type and polarity, coupled with a gate driver and glitch cancellation circuitry, capable of handling voltages exceeding +/−5 V and operating in cryogenic environments, using DMOSFETs to withstand high bipolar OFF-state voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional CMOS technology is used in electrical switching circuits, then the circuit can operate with standard voltage levels, but the circuit cannot meet the high voltage requirements of quantum computer operational criteria
Solution Approach 1:
The patent changes the voltage parameter handling capability by transitioning from standard CMOS technology to DMOSFET-based high-voltage semiconductor switches. This parameter change enables the switching circuit to operate at voltages exceeding +/−5 V, specifically designed to meet quantum computer operational criteria that require higher voltage tolerance while maintaining operational integrity in cryogenic environments.
2Power
If high voltages are used in quantum computer switching circuits, then the operational criteria can be met, but traditional semiconductor switches cannot withstand the voltage and fail
Solution Approach 1:
The patent modifies the voltage withstand parameter by employing DMOSFETs in the high-voltage semiconductor switch design. This parameter change allows the switch to reliably handle voltages exceeding +/−5 V, including high bipolar OFF-state voltages, without failure, thereby meeting the power requirements of quantum computer electrode control while ensuring switch durability.
3Device complexity
If standard semiconductor switches are used, then the circuit design is simple, but the switches generate excessive noise and parasitic losses that affect quantum object control
Solution Approach 1:
The patent changes the noise and parasitic loss parameters by designing a specialized high-voltage semiconductor switch with glitch cancellation circuitry and optimized DMOSFET configuration. This parameter change reduces switching noise and parasitic losses to levels suitable for quantum object confinement apparatus, while maintaining a manageable circuit structure through integrated design.
4Power
If quantum computer switching circuits are designed for high voltage operation, then operational criteria are met, but the switch performance degrades in cryogenic conditions
Solution Approach 1:
The patent modifies the temperature performance parameter by selecting and configuring DMOSFETs that maintain reliable operation in cryogenic environments. This parameter change ensures that the high-voltage semiconductor switch retains its voltage handling capability and switching performance at low temperatures, meeting both the power requirements and cryogenic operational requirements of quantum computer systems.
Data Source
AI summary
A quantum object confinement apparatus comprising one or more high-voltage semiconductor switches is provided. Each switch comprises a transmission gate portion, a gate driver portion, a current distribution portion, and a logic enable portion. The transmission gate portion comprises two transistors connected in series source-to-source or drain-to-drain. The gate driver portion detects a voltage at the switch input terminal and the switch output terminal and applies a bias voltage to the gates of the two transistors of the transmission gate portion that is a predetermined amount above a lesser or a greater of the voltage at the switch input terminal or the voltage at the switch output terminal.