High Voltage Switch Module Integrated Heatsink

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Solution Overview

Problem

Conventional high-voltage switch modules face issues with stray capacitance, leading to electromagnetic interference and power loss due to their construction, which is inadequate for high-frequency and high-dv/dt operations.

Innovation Solution

A high-voltage switch module is designed with an electrically insulating heatsink and a patterned conductor layer, where high-voltage and low-voltage active semiconductor components are bonded, along with clamping, loading, and dynamic balancing components, eliminating stray capacitance by direct integration of the circuit on the heatsink, using materials like alumina or aluminum nitride and copper via direct-copper bonding or active metal brazing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional high-voltage switch modules are constructed with separate insulating substrates and baseplates, then electrical isolation is achieved, but stray capacitance increases leading to electromagnetic interference and power loss

Engineering Contradiction:
Improveelectrical isolationVSAvoidstray capacitance
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent combines the insulating substrate and baseplate into a single integrated heatsink structure with an electrically insulating body. The circuit pattern is directly formed on the top surface of this integrated structure, eliminating the need for separate insulating substrates and baseplates. This merging reduces the number of interfaces and materials that contribute to stray capacitance while maintaining electrical isolation through the intrinsic properties of the insulating heatsink material.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent extracts and eliminates the separate insulating substrate layer that traditionally sits between the semiconductor devices and the baseplate. By removing this intermediate layer and directly forming the circuit pattern on the insulating heatsink surface, the design reduces parasitic capacitance contributions from multiple dielectric layers and interfaces, thereby reducing electromagnetic interference and power loss.

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If multiple separate components and layers are used in conventional modules, then electrical isolation and structural support are achieved, but thermal resistance increases

Engineering Contradiction:
Improveelectrical isolationVSAvoidthermal resistance
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent merges the functions of electrical isolation, structural support, and heat dissipation into a single integrated insulating heatsink structure. This eliminates thermal interfaces between separate insulating substrates and baseplates, creating a continuous thermal path from the semiconductor devices through the circuit pattern on the heatsink surface to the cooling structures, thereby reducing thermal resistance while maintaining electrical isolation through the insulating material properties.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If conventional multi-layer constructions are used, then electrical isolation is provided, but the number of production steps increases

Engineering Contradiction:
Improveelectrical isolationVSAvoidproduction steps
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent combines multiple manufacturing operations into fewer integrated steps. The circuit pattern is directly formed on the insulating heatsink surface through techniques such as screen printing, spray deposition, or sintering, eliminating the need for separate steps to assemble insulating substrates, attach baseplates, and create interconnect layers. This integration reduces production complexity while maintaining electrical isolation through the inherent properties of the insulating heatsink material.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces thermal resistance, production steps, and stray capacitance, enhancing performance, reliability, and isolation, while minimizing electromagnetic interference and power loss, especially at high frequencies and high voltage switching.

Implementation Method 1

an electrically insulating heatsink with a patterned conductor layer on which high-voltage and low-voltage active semiconductor components are bonded

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

The heatsink may be alumina or aluminum nitride, for example

Methodology Applied
Scientific EffectThermal insulation: Thermal Insulation

Implementation Method 3

The conductor layer may be copper affixed to the heatsink via by direct-copper bonding or active metal brazing, for instance

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 4

The conductor layer may be copper affixed to the heatsink via by direct-copper bonding or active metal brazing, for instance

Methodology Applied
Scientific EffectBrazing: Brazing

Data Source

PatentUS9866213B1High voltage switch module
Publication Date: 2018.01.09 UNITED SILICON CARBIDE
  • US9866213B1 patent drawing
  • US9866213B1 patent drawing
  • US9866213B1 patent drawing

AI summary

A high-voltage switch module, such as a cascode module, includes an electrically insulating heatsink with a patterned conductor layer on which high-voltage and low-voltage active semiconductor components are bonded, along with clamping, loading, and dynamic balancing components such as diodes, resistors, and capacitors. The heatsink may be alumina or aluminum nitride, for example. The conductor layer may be copper affixed to the heatsink via by direct-copper bonding or active metal brazing, for instance. High-voltage cascode modules may be formed using a low-voltage MOSFET in combination with a chain of silicon carbide normally-on n-channel JFET devices with a variety of configurations of clamping, loading, and balancing devices, for example.