High-Voltage T-Connector With Moulded Field-Grading Insulation
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Solution Overview
Problem
Current solutions for connecting high voltage cables above 42 kV require large and non-maintenance-free gas insulated switchgear systems, which are inefficient and unreliable for scaling and maintenance.
Innovation Solution
A connector design featuring a metal conductor with an insulating layer moulded onto its ends and intermediate sections, combined with a semiconductive layer, providing specific distances to manage electric field distribution and facilitate connections without gas insulation, using thermoplastics or thermosetting polymers and non-ferrous metals like aluminum or copper.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gas insulated switchgear systems are used for high voltage cables above 42 kV, then electrical insulation is achieved, but the system becomes large and requires maintenance
Solution Approach 1:
The patent extracts the gas insulation requirement entirely from the system. Instead of using gas insulated switchgear, the invention employs solid insulating materials (moulded insulating layers) combined with semiconductive layers for field control, eliminating the need for gas filling and associated maintenance while reducing system size
Solution Approach 2:
The patent changes the insulation parameter from gas-based to solid material-based insulation. By using moulded insulating layers with specific semiconductive coatings, the system achieves high voltage insulation (above 42 kV) through material property changes rather than gas containment, thereby eliminating maintenance requirements and reducing complexity
2Productivity
If conventional connection methods are used for high voltage cables, then connections can be made, but efficiency and reliability are reduced
Solution Approach 1:
The patent applies preliminary action by pre-moulding the insulating layers and pre-applying semiconductive coatings to the connector components before installation. This pre-preparation ensures proper electric field distribution is established from the outset, improving both connection efficiency and long-term reliability without requiring complex on-site procedures
Solution Approach 2:
The patent uses composite material structures combining moulded insulating materials with semiconductive layers. This composite approach creates a unified connector design that provides both electrical insulation and field control in a single integrated component, enhancing connection reliability and simplifying installation procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The connector enables efficient and reliable connections for high voltage cables above 52 kV, simplifying installation and maintenance by distributing electric fields uniformly and reducing the need for gas insulation, thus improving efficiency and reliability.
Implementation Method 1
an insulating layer; characterized in that the insulating layer is moulded onto the second end and the intermediate section of the first elongated conductor element
Implementation Method 2
the semiconductive layer is provided outside of the insulating layer; wherein the semiconductive layer is provided at a first semiconductor distance from the first end of the first elongated conductor element
Data Source
Figure 1
Figure 2
Figure 3a~3b
AI summary
The present invention relates to a connector (1) for high voltage cables comprising a metal conductor (11) comprising a first elongated conductor element having a first end (12a), a second end (12b) and an intermediate section (12c) between the first end (12a) and the second end (12b); an insulating layer (21); a semiconductive layer (31). Wherein the insulating layer is moulded onto the second end (12b) and the intermediate section (12c) of the first elongated conductor element (12) and the insulating layer (21) is provided at a first insulator distance (DI1) from the first end (12a) of the first elongated conductor element (12). The semiconductive layer (31) is provided outside of the insulating layer (21) and the semiconductive layer (31) is provided at a first semiconductor distance (DS1) from the first end (12a) of the first elongated conductor element (12). The first insulator distance (DI1) is shorter than the first semiconductor distance (DS1). The insulating layer (21) is moulded as one single insulating body.