High-Voltage Transistor Assembly With Secondary Gate Spacing
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Solution Overview
Problem
Traditional field-effect transistors (FETs) have a low breakdown voltage, making them unsuitable for high-voltage applications, and existing modifications to enhance their suitability are costly to fabricate.
Innovation Solution
The development of transistor configurations with secondary gate structures that space the source/drain regions from the channel region, which can be coupled to a reference voltage or driver circuitry to tailor voltage for operational modes, enhancing the transistors' breakdown voltage and operational efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the distance between drain and gated channel region is increased to enhance breakdown voltage, then high-voltage suitability is improved, but fabrication complexity and cost increase
Solution Approach 1:
The transistor structure is segmented into distinct regions: a first source/drain region directly adjacent to the channel, and a second source/drain region spaced from the channel by an intervening region. This segmentation allows the transistor to achieve high breakdown voltage through the spaced configuration while maintaining manageable fabrication complexity by using standard self-aligned processes.
Solution Approach 2:
An intervening region is introduced between the second source/drain region and the channel region. This intermediary structure enables the second source/drain region to be spaced from the channel, thereby increasing breakdown voltage, while the region itself can be formed using conventional self-aligned fabrication techniques that do not significantly increase process complexity.
2Reliability
If secondary gate structures are added to space source/drain regions from channel, then breakdown voltage is improved, but device complexity increases
Solution Approach 1:
The secondary gate structure serves multiple functions: it spaces the source/drain region from the channel to increase breakdown voltage, and it can be electrically controlled or held at a static reference voltage to provide additional operational flexibility. This multi-functionality justifies the added structural element without proportionally increasing complexity.
Solution Approach 2:
The secondary gate structure can be configured in different operational modes: it can be electrically controlled to dynamically adjust transistor characteristics, or held at a static reference voltage for stable operation. This dynamic configurability allows the same structure to adapt to different application requirements without requiring multiple different structures.
Data Source
AI summary
Some embodiments include an integrated assembly having a first gate operatively adjacent a channel region, a first source/drain region on a first side of the channel region, and a second source/drain region on an opposing second side of the channel region. The first source/drain region is spaced from the channel region by an intervening region. The first and second source/drain regions are gatedly coupled to one another through the channel region. A second gate is adjacent a segment of the intervening region and is spaced from the first gate by an insulative region. A lightly-doped region extends across the intervening region and is under at least a portion of the first source/drain region. Some embodiments include methods of forming integrated assemblies.