Hill-Shaped Silicon Oxide Gate for Mixed Voltage
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Solution Overview
Problem
Current gate oxide processes are unable to simultaneously support high voltage and low voltage devices on the same die, leading to suboptimal performance due to unsuitable optimization for either voltage level.
Innovation Solution
A semiconductor structure with a silicon oxide layer having a top surface in the shape of plural hills, formed through a thermal oxidation process using multiple masks, which allows for the creation of a gate oxide layer suitable for both high voltage and low voltage devices by varying the thickness and shape of the oxide layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single gate oxide thickness is used across the entire die, then manufacturing simplicity is maintained, but device performance optimization deteriorates
Solution Approach 1:
The patent segments the gate oxide formation into multiple sequential steps, with each step forming oxide layers in specific regions. First gate oxide layers are formed in first regions, then second gate oxide layers are formed in second regions. This segmented approach maintains manufacturing feasibility through systematic process steps while achieving the performance benefits of differentiated oxide thicknesses.
Solution Approach 2:
The patent employs preliminary action by forming first gate oxide layers in specific regions before forming second gate oxide layers in other regions. This sequential preparation allows subsequent processing steps to be optimized for each region's specific requirements, achieving performance optimization without sacrificing manufacturing organization or control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon oxide layer with a top surface in the shape of plural hills enables the fabrication of transistors with improved operational efficiency, reducing on-state resistance and effectively supporting both high voltage and low voltage operations without device breakdown.
Implementation Method 1
the substrate is oxidized to forma silicon oxide layer having a top surface in the shape of plural hills
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a substrate, a silicon oxide layer disposed on the substrate, and at least part of a gate electrode covering the silicon oxide layer. A top surface of the silicon oxide layer is in the shape of plural hills. The silicon oxide layer can provide low on-state resistance for the semiconductor structure.