HIPIMS Mixed Crystal Layer Deposition
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Solution Overview
Problem
Existing methods for producing mixed crystal layers using high power impulse sputtering (HIPIMS) face challenges such as target poisoning and mismatched layer composition due to simultaneous operation of targets with different materials, and the need for complex dual PVD processes which can result in spatters and layer roughness.
Innovation Solution
The method involves using HIPIMS with at least two targets of different materials, where the operating point is adjusted separately by controlling power pulses in terms of power and pulse duration to prevent target poisoning and achieve independent operation, allowing for the production of mixed crystal layers without arc evaporation, enabling precise control over the sputtering process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If two targets with different materials are operated simultaneously using the same process parameters, then the mixed crystal layer can be deposited, but the different targets poison to different degrees and cannot be kept in the desired working mode
Solution Approach 1:
The patent applies dynamics by making the sputtering process adjustable and variable through independent control of process parameters for each target. The reactive gas flow ratio and sputtering power can be dynamically modified during deposition to optimize the operating point for each target material, preventing target poisoning and maintaining stable operation throughout the deposition process.
Solution Approach 2:
The patent implements parameter changes by allowing independent adjustment of reactive gas flow ratios and sputtering power for each target. This enables optimization of the operating point for each target material separately, ensuring that both targets operate in their desired working modes without mutual interference or poisoning effects.
2Adaptability or versatility
If composite targets are used to produce mixed crystal layers, then different concentration ratios can be realized, but the layer composition does not match the initial composition of the target material
Solution Approach 1:
The patent applies segmentation by using separate targets for different materials instead of a single composite target. Each target can be independently controlled and optimized, allowing precise adjustment of the deposited layer composition to match the desired stoichiometry, unlike composite targets where the layer composition deviates from the target material composition.
Solution Approach 2:
The patent implements parameter changes by independently adjusting the sputtering power and reactive gas flow ratio for each target during deposition. This enables precise control over the deposition rate and composition from each target, allowing the final mixed crystal layer composition to accurately match the desired stoichiometry.
3Productivity
If dual magnetron or HIPIMS and arc evaporation are operated simultaneously, then mixed crystal layers can be deposited with two different metals, but spatters occur in the mixed crystal layer which negatively influence the layer properties
Solution Approach 1:
The patent merges the advantages of HIPIMS and reactive sputtering by using HIPIMS for both targets without arc evaporation. This combination maintains high deposition rates and excellent layer properties while avoiding the spatter formation associated with arc processes, achieving smooth mixed crystal layers with controlled composition.
Solution Approach 2:
The patent replaces the arc evaporation process with HIPIMS, eliminating the harmful spatter effect while maintaining the ability to deposit mixed crystal layers. HIPIMS provides a cleaner deposition process that produces smooth layers without the negative influences of arc-induced spatters on layer roughness and adhesion.
4Adaptability or versatility
If dual cathode sputtering or HIPIMS with two different targets are used, then two different layers can be deposited, but the targets must be operated alternately with a defined time delay
Solution Approach 1:
The patent implements continuity of useful action by enabling simultaneous operation of both targets during deposition. This eliminates the need for alternating operation with time delays, allowing continuous deposition of mixed crystal layers with both materials deposited concurrently, improving process efficiency and reducing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the production of dense, smooth mixed crystal layers with controlled composition and reduced target poisoning, eliminating the need for dual PVD processes and minimizing spatters, thereby improving layer properties like roughness and adhesion.
Implementation Method 1
High power impulse sputtering (HIPIMS)... using at least two targets with different materials
Data Source
Figure 1~2
Figure 3
AI summary
The invention relates to a method for coating substrates by sputtering of target material, the method comprising the following steps: - applying a first sputtering target made of a first material in a coating chamber to a power pulse by which, during a first time interval, a first amount of energy is transmitted to the sputtering target, wherein the maximum power density exceeds 50W/cm2 and preferably 500W/cm2; - applying a second sputtering target made of a second material that is different from the first material in the coating chamber to a power pulse by which, during a second time interval, a second amount of energy is transmitted to the sputtering target, wherein the maximum power density exceeds 50W/cm2 and preferably 500W/cm2, characterized in that the first amount of energy differs from the second amount of energy.