Non-volatile Memory Hole Pre-charge Isolated Source Lines

Instead of using electron pre-charging which causes negative coupling and disturb errors in unselected cells, the patent inverts the approach by using hole pre-charging. Holes are injected into the channel of unselected memory cells to raise their potential, which prevents electron tunneling and programming in unselected cells during the subsequent programming operation, thereby eliminating disturb errors while maintaining programming speed.

The patent changes the charge carrier type from electrons to holes for the pre-charging operation. By injecting holes instead of electrons into the channel, the electrical parameters of the memory cells are altered in a way that prevents the negative coupling effect and disturb errors that occur with electron pre-charging, while still achieving the necessary potential adjustment for reliable programming.

The source line is segmented into multiple isolated source lines, each with its own signal line. This segmentation reduces current consumption by limiting the voltage application scope, and the increased structural complexity is managed through systematic isolation regions and standardized connection patterns that facilitate manufacturing and control.

Different source line subsets are assigned to different signal lines, allowing each segment to have optimized characteristics for its specific function. This local quality approach enables tailored voltage application to specific memory cell regions, improving overall system efficiency while managing complexity through functional specialization.