Hollow Cathode Plasma Filter for Ion-Radical Control

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Solution Overview

Problem

Current semiconductor manufacturing processes using plasma struggle to effectively control the ratio of ions and radicals in plasma processing, leading to inefficient etching and potential substrate damage.

Innovation Solution

A plasma processing apparatus with a hollow cathode system that generates a lower plasma in cathode holes, filtering ions and allowing radicals to pass through, while controlling the etch rate by adjusting the high-frequency and bias power outputs to achieve a desired ratio of ions and radicals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high-frequency power is used to generate plasma for etching, then the etching process can be performed, but the ratio of ions and radicals cannot be effectively controlled, leading to substrate damage

Engineering Contradiction:

Improveetching efficiencyVSAvoidetch uniformity and substrate damage control

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The plasma generation system is segmented into two independent plasma electrodes, each capable of generating plasma with different characteristics. The first plasma electrode generates plasma with a certain ion-radical ratio, while the second plasma electrode generates plasma with a different ion-radical ratio, allowing independent control of each plasma source to achieve precise overall control.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The invention changes the parameters of the plasma generation system by using two different plasma electrodes with different configurations, power inputs, and gas flow rates to produce plasmas with different ion-radical ratios. By adjusting these parameters independently, the overall ion-radical ratio in the reaction chamber can be precisely controlled.

Inventive Principle:

Principle #35Parameter changes

2Productivity

If conventional plasma processing is used, then substrates can be treated, but etch rate control is inefficient due to inability to control ion and radical ratios

Engineering Contradiction:

Improveetch rateVSAvoidetch rate control precision

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The plasma generation system is divided into two independent plasma electrodes, each capable of generating plasma with different characteristics. The first plasma electrode generates plasma with a certain ion-radical ratio, while the second plasma electrode generates plasma with a different ion-radical ratio, allowing independent control of each plasma source to achieve precise overall control.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for precise control of the etch rate and minimizes substrate damage by selectively generating ions and radicals, enhancing etch uniformity and efficiency in semiconductor device manufacturing.

Implementation Method 1

High frequency power is generally used to produce the plasma

Methodology Applied

Scientific EffectHigh-frequency power generation of plasma: Plasma

Implementation Method 2

generating a lower plasma in cathode holes of the hollow cathode by respectively providing a bias power output to at least one bottom electrode and a source power output to at least one top electrode of the hollow cathode

Methodology Applied

Scientific EffectCathode plasma generation: Plasma

Implementation Method 3

The hollow cathode may comprise cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma. The step of generating the upper plasma may comprise filtering ions in the upper plasma and allowing radicals in the upper plasma to pass through the cathode holes

Methodology Applied

Scientific EffectPlasma sheath filtering: Filter (physical)

Data Source

PatentUS10950414B2Plasma processing apparatus and method of manufacturing semiconductor device using the same

Publication Date: 2021.03.16 SAMSUNG ELECTRONICS CO LTD

AI summary

Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.