Hollow Cathode Plasma Layout for Uniform Low-Damage Processing

The plasma source is divided into multiple independent RF electrodes arranged in an array configuration. Each electrode can be independently controlled to generate plasma, allowing the overall plasma density to be high while maintaining uniformity through coordinated control of individual electrode segments.

Each RF electrode in the array is designed with specific local characteristics to optimize plasma generation at that location. The electrodes can be independently tuned to compensate for spatial variations in the chamber, ensuring uniform plasma distribution across the workpiece while maintaining high overall density.

The plasma generation uses periodic RF power application to the electrode array, creating pulsed plasma bursts that provide high etching rates during active phases while allowing ion energy to be controlled and reduced during off phases, minimizing bombardment damage to the workpiece.

The system independently controls multiple parameters including RF power level, gas flow rates, and electrode activation patterns to achieve the desired balance between high etching rate and minimal ion damage. By adjusting these parameters, the plasma chemistry and ion energy distribution can be optimized for each specific processing requirement.

The electrode array allows only the necessary subset of electrodes to be activated at any given time based on the specific processing requirements and workpiece position. This segmented activation pattern reduces overall energy consumption compared to conventional sources that must operate at high power continuously to maintain plasma density.

The system dynamically adjusts the activation and power level of individual electrodes in real-time based on process conditions, workpiece position, and desired plasma distribution. This dynamic control enables the plasma source to maintain high processing speed when needed while reducing energy consumption during transitions or when lower plasma density suffices.