Hollow Channel Semiconductor Device Field Control
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Solution Overview
Problem
Vacuum field effect transistors (VFTs) face challenges in controlling electron flow due to asymmetric electric field distribution, leading to high energy consumption and inefficient on/off switching.
Innovation Solution
A semiconductor device design featuring a hollow channel surrounded by a gate electrode with dielectric and insulating members, and sidewalls made of low work function materials, which encloses the electric field to control electron flow effectively and reduce energy consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If additional voltage is applied to achieve desirable control of the VFT, then the controllability of electron flow is improved, but the energy consumption increases substantially
Solution Approach 1:
The patent changes the physical parameters of the channel by introducing a hollow structure filled with inert gas or vacuum, and by controlling the thickness of the dielectric member (1-10 nm), to enable effective electron flow control at lower voltages, thereby reducing energy consumption while maintaining controllability
Solution Approach 2:
The dielectric member positioned between the hollow channel and gate electrode acts as an intermediary that modifies the electric field distribution, enabling better control of electron flow with reduced voltage requirements, thus lowering energy consumption while improving controllability
2Device complexity
If the electric field distribution is asymmetric in the vacuum channel, then the device structure is simpler, but the electron transmission control becomes insufficient
Solution Approach 1:
The patent introduces localized structures (hollow channel with dielectric member) at specific positions within the device to modify electric field distribution locally, achieving symmetric and controllable electron transmission without substantially increasing overall device complexity
Solution Approach 2:
The hollow channel structure adds a dimensional feature to the device architecture, enabling new degrees of freedom in electric field control and electron transmission management while maintaining reasonable structural complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design allows for precise control of electron flow and minimizes energy consumption by enclosing the electric field, enhancing the controllability and efficiency of the semiconductor device.
Implementation Method 1
At least one of the first sidewall and the second sidewall may be formed of a low work function material. The low work function material may be or may include at least one of Zr, V, Nb, Ta, Cr, Mo, W, Fe, Co, Pd, Cu, Al, Ga, In, Ti, TiN, TaN, and diamond.
Implementation Method 2
a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode; and a second insulating member positioned between the gate electrode and the drain electrode
Data Source
AI summary
A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.