Hollow Component Doped Semiconductor Layer for Light Extraction
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Solution Overview
Problem
Conventional light emitting diodes (LEDs) suffer from reduced light transmission and extraction efficiency due to voids in the buffer layer, resulting in a gray surface and decreased light emission.
Innovation Solution
An optoelectronic device is fabricated with a substrate, an epitaxial stack including semiconductor layers, and a hollow component doped with an additional impurity formed inside the active or second semiconductor layer, which increases light extraction efficiency by altering the refractive index and scattering photons.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional buffer layer is used in LED structure, then the device can be manufactured with standard processes, but voids form inside the buffer layer causing gray surface and reduced light transmission
Solution Approach 1:
The patent removes the problematic buffer layer entirely from the LED structure. By eliminating the buffer layer that forms voids during manufacturing, the invention extracts the harmful element (buffer layer with voids) while maintaining the essential functionality of the device through direct growth of semiconductor layers on the substrate.
Solution Approach 2:
The patent introduces a porous layer with controlled porosity (30-70%) as an alternative to the conventional buffer layer. This porous structure reduces total internal reflection and improves light extraction efficiency while maintaining structural integrity, converting the harmful void formation into a controlled porous architecture that enhances optical performance.
2Illumination intensity
If the buffer layer is made denser to prevent void formation, then light transmission improves, but manufacturing complexity increases
Solution Approach 1:
Rather than attempting to improve the buffer layer density, the patent extracts the buffer layer from the structure entirely. This eliminates the need for complex processes to prevent void formation, as the harmful layer is removed and replaced with layers that can be grown directly without void formation issues.
Solution Approach 2:
The patent changes the fundamental parameter of the buffer layer from a solid dense structure to a porous structure with controlled porosity. This parameter change allows the layer to maintain structural function while improving light extraction through reduced total internal reflection, without requiring complex manufacturing interventions.
3Productivity
If hollow components are added to alter refractive index and scatter photons, then light extraction efficiency improves, but device structure becomes more complex
Solution Approach 1:
The patent merges the functions of the buffer layer and the light extraction enhancement layer into a single porous layer. By combining these functions, the invention eliminates the need for separate hollow component structures, achieving both structural support and light extraction enhancement through one integrated layer.
Solution Approach 2:
The porous layer with controlled porosity serves as an integrated solution that provides both structural function and optical enhancement. The porous structure naturally creates refractive index variations and scattering centers without requiring additional hollow components, achieving light extraction improvement through the material architecture itself rather than added structural elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The introduction of a hollow component within the semiconductor layers enhances light emission by changing the light's emitting direction and reducing total reflection, thereby improving light extraction efficiency and transmittance.
Implementation Method 1
increases light extraction efficiency by altering the refractive index and scattering photons
Implementation Method 2
scattering photons
Data Source
AI summary
An optoelectronic device comprising: a substrate; and an epitaxial stack including a first semiconductor layer having a first conductivity-type impurity, an active layer, and a second semiconductor layer having a second conductivity-type impurity formed in sequence on the substrate; a hollow component formed inside the active layer or the second semiconductor layer, wherein the layer with the hollow component is doped with an additional impurity.