Hollow-Gate MOSFET Control Reduces ON Resistance and Feedback Capacitance
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Solution Overview
Problem
The existing technologies face challenges in reducing both ON resistance and feedback capacitance in hollow-gate type planar MOSFETs, which leads to increased switching loss due to large feedback capacitance, especially when a positive voltage is applied to the second gate electrode during switching operations.
Innovation Solution
A control device is developed to control the driving of semiconductor devices with a first gate electrode and a second gate electrode, where the second gate electrode is maintained at the same potential as the source electrode during ON/OFF control signals, effectively reducing ON resistance and feedback capacitance by optimizing the driving sequence of the gate electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If switching frequency is increased to reduce output capacitor size, then VR size and cost are reduced, but MOSFET temperature exceeds upper limit due to increased switching loss
Solution Approach 1:
By segmenting the gate control into two separate electrodes, the invention enables high-frequency switching operation with reduced switching loss per cycle, allowing the MOSFET to operate at higher temperatures without exceeding the upper limit
Solution Approach 2:
The invention changes the electrical parameters by applying different voltages to the first and second gate electrodes independently. This parameter control optimizes the switching characteristics, reducing switching loss and enabling higher switching frequencies without excessive temperature rise
Data Source
AI summary
A control device of a semiconductor device is provided. The control device of a semiconductor device is capable of reducing both ON resistance and feedback capacitance in a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided. In the control device controlling driving of a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided, a signal of tuning ON or OFF is outputted to a gate electrode in a state of outputting a signal of turning OFF to the second gate electrode.