Hollow Resin Particle Structure for Low-Dk Semiconductor Compositions
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Solution Overview
Problem
Existing hollow porous resin particles used in semiconductor members have insufficient mechanical strength, making them prone to breakage under external forces and unable to maintain low dielectric properties effectively.
Innovation Solution
Development of hollow resin particles with a specific structure and composition, including a polymer containing vinyl-based and phosphoric acid ester-based monomer-derived structural units, which have a high volume average particle diameter and specific surface area, resulting in improved mechanical strength and dielectric properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If hollow porous resin particles with thin surface layer are used to lower dielectric constant, then dielectric properties are improved, but mechanical strength deteriorates
Solution Approach 1:
The patent applies local quality by creating a hollow porous structure where the interior has high porosity (50-90%) to reduce dielectric constant, while the exterior surface layer maintains sufficient thickness and density to provide mechanical strength. This spatial differentiation of structure allows simultaneous optimization of dielectric properties and mechanical strength.
Solution Approach 2:
The patent uses composite materials by combining hollow porous resin particles with specific polymer compositions (containing rigid and flexible chains) to achieve both low dielectric constant and high mechanical strength. The composite structure of the particle itself (porous interior + dense shell) and its composition (copolymer of rigid and flexible units) resolves the contradiction.
2Loss of energy
If hollow particles are introduced to reduce relative dielectric constant, then dielectric properties are improved, but particle breakage increases under external force
Solution Approach 1:
The patent employs a flexible yet strong shell structure around the hollow porous interior. The surface layer is designed with specific thickness and polymer composition (including flexible chain units) that provides both mechanical protection against breakage and maintains the hollow structure's dielectric benefits.
Solution Approach 2:
The patent implements beforehand cushioning by designing a robust surface layer that acts as a protective cushion against external forces before they can damage the hollow interior. This pre-engineered protective layer prevents particle breakage during handling and processing.
3Loss of energy
If thin surface layer hollow particles are used to achieve low dielectric constant, then dielectric performance is improved, but shape stability deteriorates
Solution Approach 1:
The patent applies local quality by differentiating the structure into a hollow porous interior (for dielectric performance) and a dense surface layer (for shape stability). The surface layer's specific thickness and composition provide structural support that maintains particle shape under external forces while the hollow interior maintains low dielectric constant.
Data Source
AI summary
There is provided hollow resin particles used in a resin composition for semiconductor members, which can be used in a resin composition for semiconductor members to provide a semiconductor member capable of exerting excellent low dielectric properties. The hollow resin particles used in a resin composition for semiconductor members according to an embodiment of the present invention are hollow resin particles having a hole part inside the particle, wherein a decreasing rate of a relative dielectric constant Dk1 of a film (F1) formulated with 80 parts by weight of polyimide and 20 parts by weight of the hollow resin particles to a relative dielectric constant Dk0 of a film (F0) formed with only the polyimide is 3% or more.