Hollow Heat Dissipation Substrate With Direct Bonding for Power Modules
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Solution Overview
Problem
Conventional heat dissipation substrates for power semiconductor modules face issues such as increased thermal resistance and separation/warpage due to adhesive layers and differing thermal expansion coefficients, leading to reduced heat dissipation performance and potential thermal runaway.
Innovation Solution
A heat dissipation substrate with a hollow structure formed by directly bonding metal plates to an insulating substrate through a hot press process, eliminating the need for adhesive layers and minimizing thermal expansion coefficient differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If adhesive layers are used to bond metal plates to insulating substrates, then bonding strength is improved, but thermal resistance increases and heat dissipation performance deteriorates
Solution Approach 1:
The invention removes the adhesive layer from the bonding process between metal plates and insulating substrates. By directly bonding the metal plates to the insulating substrate through the hot press process, the adhesive layer is completely eliminated, thereby removing the thermal resistance barrier it creates while maintaining bonding strength through direct metal-to-ceramic contact.
Solution Approach 2:
The invention introduces a transition layer or surface treatment on the metal plate or insulating substrate that facilitates direct bonding without requiring adhesive. This intermediary surface modification enables strong bonding while maintaining thermal conductivity, replacing the need for adhesive-mediated bonding.
2Ease of manufacture
If adhesive layers are used for bonding components, then ease of assembly is improved, but component separation and warpage occur due to thermal expansion coefficient differences
Solution Approach 1:
The invention changes the bonding method from adhesive-based to direct hot press bonding, fundamentally altering the bonding parameters. This direct bonding approach creates a joint that can better accommodate thermal expansion differences through the inherent flexibility of the metal-ceramic interface, preventing separation and warpage while maintaining assembly simplicity.
Solution Approach 2:
The invention creates a composite structure where metal plates are directly bonded to insulating substrates through controlled hot press bonding. This composite construction allows the different materials to maintain their individual properties while forming a stable integrated structure that resists thermal expansion mismatches better than adhesive-bonded assemblies.
3Device complexity
If conventional bonding methods are used, then manufacturing simplicity is maintained, but thermal resistance increases and heat transfer efficiency decreases
Solution Approach 1:
The invention extracts and removes the adhesive layer from the bonding process, eliminating the thermal resistance barrier it creates. By directly bonding metal plates to insulating substrates through hot press, the process maintains simplicity while dramatically improving heat transfer efficiency through direct thermal contact between components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances heat transfer efficiency, reduces thermal resistance, and prevents component separation/warpage, thereby improving the reliability and performance of power semiconductor modules.
Implementation Method 1
A heat dissipation substrate with a hollow structure formed by directly bonding metal plates to an insulating substrate through a hot press process
Implementation Method 2
This design enhances heat transfer efficiency, reduces thermal resistance
Data Source
Figure 1A~2
Figure 3~4
Figure 5~7A
AI summary
The embodiment relates to a heat dissipation substrate for a power semiconductor module, a power semiconductor module including the same, a power converter including the same, and a method of manufacturing the same. A heat dissipation substrate for a power semiconductor module according to an embodiment includes an insulating substrate, a lower metal plate disposed below the insulating substrate, and an upper metal plate disposed on the insulating substrate, wherein the lower metal plate has a hollow structure.