Display Substrate Hollowed Electrode Adhesion
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Solution Overview
Problem
In the manufacturing of display substrates with organic thin film transistors, the adhesive force between film layers is insufficient at low process temperatures, leading to peeling defects between the protection layer and the first transparent electrode.
Innovation Solution
The display substrate incorporates a first electrode with multiple hollowed-out structures, an organic protection layer that covers the first electrode and the organic thin film transistor, and fills the hollowed-out structures, thereby increasing surface roughness and adhesion between the first electrode and the organic protection layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If low process temperature is used for manufacturing organic thin film transistors, then bending resistance and flexibility are improved, but adhesive force between film layers deteriorates causing peeling defects
Solution Approach 1:
The first electrode is designed with hollowed-out structures (porous configuration) that increase the surface area and provide mechanical interlocking with the organic protection layer. The organic protection layer fills these hollowed-out structures, creating a strong adhesive bond that prevents peeling defects while maintaining compatibility with low process temperature manufacturing
Solution Approach 2:
The solution transitions from a flat two-dimensional electrode surface to a three-dimensional structure with hollowed-out portions. This dimensional change increases the effective bonding area between the first electrode and the organic protection layer, enhancing adhesive force without requiring higher process temperatures
Data Source
AI summary
The present disclosure provides a display substrate, a display device, and a manufacturing method. The display substrate includes a base substrate and a plurality of pixels arranged at a side of the base substrate. Each pixel includes: an organic thin film transistor including a gate electrode, an organic semiconductor layer and a source/drain electrode; a first electrode including a plurality of first hollowed-out structures; and an organic protection layer covering the first electrode and the organic thin film transistor and filling the first hollowed-out structures.