Holographic Imaging for Mask Pattern Correction
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Solution Overview
Problem
Current resolution enhancement techniques (RETs) in semiconductor manufacturing, such as optical proximity correction (OPC), are computationally inefficient and produce poor quality results, leading to increased time-to-market and decreased yield, which can result in significant revenue loss.
Innovation Solution
The implementation of holographic imaging technology (HIT) for RETs, specifically computing an in-line hologram of target patterns and determining mask patterns based on photolithography process parameters, allowing for efficient and accurate OPC corrections without requiring conventional rigorous models, and enabling the rapid determination of optimal photomask designs and sub-resolution assist features placement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional optical proximity correction (OPC) techniques are used, then mask correction can be performed, but computational efficiency is poor and processing time is excessive
Solution Approach 1:
The patent replaces conventional iterative OPC algorithms with a holographic imaging approach that uses optical field propagation principles. By computing the in-line hologram through diffraction pattern calculation and interference with a reference wavefront, the system achieves mask correction without the computational burden of traditional iterative methods, significantly improving processing speed while maintaining correction accuracy
Solution Approach 2:
The invention changes the fundamental computational parameters by using holographic imaging parameters (diffraction patterns, wavefront interference) instead of conventional OPC parameters. This parameter transformation allows the system to determine mask patterns directly from the hologram through contour comparison with thresholds, eliminating the need for time-consuming iterative optimization processes
2Manufacturing precision
If conventional OPC techniques are used, then correction can be applied, but the quality of results is poor and yield decreases
Solution Approach 1:
By substituting conventional OPC with holographic imaging technology, the system achieves superior pattern printing accuracy. The holographic approach captures the complete optical field information including phase and amplitude, allowing for more accurate prediction of printed patterns and better correction of optical proximity effects, which directly improves manufacturing yield
Solution Approach 2:
The patent creates a virtual optical copy of the mask pattern through hologram computation. This virtual copy allows for accurate simulation and prediction of the printed pattern before actual manufacturing, enabling precise correction decisions that improve both printing accuracy and yield without requiring multiple physical trial runs
3Ease of operation
If conventional OPC techniques are used, then correction processes can be performed, but extensive script writing and iterative processes are required
Solution Approach 1:
The holographic imaging approach replaces complex iterative OPC algorithms with a direct computational method based on diffraction theory. The process simplifies to computing the hologram, calculating the diffraction pattern, and determining contours through threshold comparison, eliminating the need for extensive scripting and iterative loops while reducing overall process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
HIT-based RETs provide a fast and accurate OPC correction method that reduces computational resources and engineering needs, improving mask correction speed and accuracy, and enhancing wafer printability fidelity by correctly placing sub-resolution assist features, thus reducing the need for extensive script writing and iterative processes.
Implementation Method 1
computing a diffraction pattern that is produced at a pre-determined distance from the target patterns
Implementation Method 2
computing an interference pattern between a coherent reference wave front and wave fronts diffracted or scattered by the target patterns
Data Source
AI summary
Systems and techniques for performing resolution enhancement on target patterns based on holographic imaging technique (HIT) are described. During operation, an electronic design automation (EDA) tool can compute an in-line hologram of the target patterns based on parameters associated with a photolithography process that is used in a semiconductor manufacturing process, wherein the semiconductor manufacturing process is to be used for printing the target patterns on a semiconductor wafer. Next, the EDA tool can determine the mask patterns based on the in-line hologram.