Homogeneous Memory Bit Cell Layout for High Density Macros
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Solution Overview
Problem
The challenge in semiconductor chip design is the efficient placement of memory macro blocks due to the limitations in dimensions, which often leads to interference with other components, rendering the chip inoperable or failing to achieve lower power consumption and higher performance targets.
Innovation Solution
The solution involves designing memory macro blocks without boundary cells, allowing memory bit cells and I/O blocks to share the same subset of semiconductor fabrication process parameters, thereby eliminating the need for gaps and boundary cells, which reduces the width and height of memory banks, increasing layout density, and maintaining data storage capacity without significant redesign.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If boundary cells are used to separate memory bit cells and I/O blocks, then manufacturing reliability is improved, but layout density decreases and memory bank dimensions increase
Solution Approach 1:
The patent extracts and removes the boundary cells from the memory macro block layout. By eliminating these separator cells between memory bit cells and I/O blocks, the memory bank dimensions are reduced and layout density is increased, while the same subset of fabrication process parameters is shared across all cells
Solution Approach 2:
The patent applies universality by making all cells (memory bit cells and I/O blocks) use the same subset of fabrication process parameters. This homogenization allows direct adjacency without boundary cells, as the universal parameter set ensures manufacturing reliability across the entire array
2Quantity of substance
If memory macro blocks are designed with larger dimensions to maintain data storage capacity, then data storage capacity is preserved, but placement efficiency decreases and interference with other components increases
Solution Approach 1:
The patent changes the dimensional approach by eliminating the width and height expansion caused by boundary cells. The memory array achieves its data storage capacity through optimized cell density rather than increased macro block dimensions, allowing better placement on the die
3Ease of manufacture
If boundary cells and gaps are used between memory components, then manufacturing process robustness is improved, but layout density decreases and memory bank dimensions increase
Solution Approach 1:
The patent changes the fabrication process parameters by using the same subset of parameters across all cells (memory bit cells and I/O blocks). This parameter harmonization eliminates the need for boundary cells and gaps, improving layout density while maintaining manufacturing robustness through consistent process conditions
Data Source
AI summary
An apparatus and method for designing memory macro blocks. A memory includes one or more memory banks, each with one or more arrays and input/output (I/O) blocks used to perform read accesses and write accesses. An array that utilizes multiple memory bit cells, and the I/O blocks are placed in a manner that they are abutting one another. The layout of the memory bit cells and the I/O blocks use a same subset of parameters of a semiconductor fabrication process. As a result, the memory bank does not include the placement of any boundary cells, which are used to improve yield of semiconductor layout. By skipping the use of the boundary cells, the dimensions of the memory bank are reduced, and layout density increases. Additionally, the memory bit cells use one or more p-type devices for one or more read pass gates.