Homologous Crystal Sputtering Target for Oxide Semiconductor Film
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Solution Overview
Problem
Existing sputtering targets for oxide semiconductor films, particularly those with indium oxide/gallium oxide/zinc oxide compositions, face issues such as abnormal electrical discharge, defective film formation, and poor surface quality due to anomalous growth and structural defects, leading to reduced sputtering rates and uniformity.
Innovation Solution
A sputtering target comprising an oxide sintered body with two or more homologous crystal structures, specifically including InGaO3(ZnO)m and (YbFeO3)2FeO types, is used to stabilize the sputtering process, reduce defects, and enhance sputtering rate by uniformly dispersing crystal particles with different resistances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a sputtering target with a single homologous crystal structure is used, then the manufacturing process is simple, but the sputtering rate is slow and the film quality is poor
Solution Approach 1:
The patent applies composite materials by combining multiple homologous crystal structures (InGaO3(ZnO)m and (YbFeO3)2FeO types) within a single sputtering target. This composite structure enables faster sputtering rates and better film quality compared to single-structure targets, while maintaining manufacturing simplicity through conventional sintering processes.
2Reliability
If a sputtering target with crystalline structure is used, then the target has good structural stability, but abnormal electrical discharge and particle formation occur during sputtering
Solution Approach 1:
The patent applies local quality by creating regions with different crystal structures within the target. The InGaO3(ZnO)m and (YbFeO3)2FeO phases are distributed throughout the target, with each phase providing local structural stability while the combination prevents abnormal discharge and particle formation that occurs in single-structure targets.
3Manufacturing precision
If a sputtering target with homogeneous composition is used, then the manufacturing process is simple, but the sputtering uniformity and film quality are poor
Solution Approach 1:
The patent applies parameter changes by varying the crystal structure type while maintaining homogeneous chemical composition (In-Ga-Zn-O system). The two homologous crystal structures have different lattice parameters and sputtering characteristics, and their combination improves sputtering uniformity and film quality without complicating the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in a sputtering target with improved appearance, reduced particle formation, increased sputtering rate, and enhanced film quality, enabling the production of high-density, high-mobility oxide semiconductors suitable for thin-film transistors.
Implementation Method 1
a sputtering target characterized by an oxide sintered body which comprises two or more homologous crystal structures, a method for forming an amorphous oxide thin film using the target
Data Source
AI summary
Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.