Horizontal Capacitor Layout for Fin Transistor Integration
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability while reducing complexity, particularly in the design of capacitor structures.
Innovation Solution
A semiconductor device design featuring a horizontally arranged capacitor structure with specific geometric configurations, including palm and finger portions, spacers, and conductive layers, which increases the contact area and facilitates integration with fin type transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If conventional capacitor structures are used in scaled-down semiconductor devices, then device dimensions are reduced, but contact area and performance deteriorate
Solution Approach 1:
The capacitor structure transitions from a conventional vertical arrangement to a horizontal arrangement between fins. The first and second conductive layers are positioned horizontally adjacent to each other, separated by an insulation layer, creating a planar capacitor configuration that utilizes the lateral space between fins rather than vertical stacking. This dimensional change allows increased contact area without increasing device height.
Solution Approach 2:
The capacitor structure is segmented into distinct first and second conductive layers with an insulation layer between them, allowing independent optimization of each layer's dimensions and positioning. The first conductive layer is associated with a first fin while the second conductive layer is associated with a second fin, enabling the capacitor to be distributed across multiple fins and increase total contact area.
2Reliability
If capacitor structure complexity is increased to improve performance, then contact area increases, but fabrication complexity and device complexity increase
Solution Approach 1:
The first and second conductive layers serve dual functions: they form the capacitor electrodes while also being integrated with the fin structure. The conductive layers can be formed using the same deposition and patterning processes as the transistor gates, allowing the capacitor structure to be created alongside the transistor structure in a unified fabrication sequence, reducing overall device complexity.
Solution Approach 2:
The capacitor structure is merged with the fin structure by positioning the conductive layers on or adjacent to the fins. The insulation layer is integrated into the same stack as the conductive layers, creating a compact multi-layer structure that combines capacitor functionality with the existing fin architecture, thereby improving performance without proportionally increasing complexity.
3Area of moving object
If conventional vertical capacitor arrangements are used, then fabrication process is simpler, but contact area and integration with fin type transistors are limited
Solution Approach 1:
The insulation layer is formed between the first and second conductive layers during the same deposition sequence, preparing the structure in advance for subsequent capacitor formation. The fin structures are prepared with appropriate spacing and orientation before the conductive layers are deposited, enabling the horizontal capacitor configuration to be integrated seamlessly into the fabrication process without requiring major process changes.
Data Source
AI summary
The present application discloses a semiconductor device with a horizontally arranged capacitor. The semiconductor device includes a first palm portion positioned above a substrate; a second palm portion positioned above the substrate and opposite to the first palm portion; a first finger portion arranged substantially in parallel with a main surface of the substrate, positioned between the first palm portion and the second palm portion, and connecting to the first palm portion; a second finger portion arranged substantially in parallel with the first finger portion, positioned between the first palm portion and the second palm portion, and connecting to the second palm portion; a capacitor insulation layer positioned between the first finger portion and the second finger portion; a first spacer positioned between the first palm portion and second finger portion; and a second spacer positioned between the second palm portion and the first finger portion.