Horizontal Power Package Structure for Dual-Side Cooling and Insulation
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Solution Overview
Problem
Existing high voltage and high power semiconductor devices face challenges in achieving compact size, efficient thermal dissipation, and reliable electrical insulation, particularly in horizontal packages, which are complex to manufacture and require specific layouts for each die size.
Innovation Solution
A packaged electronic device with a support structure featuring a base section and a transverse section, where a die is coupled to the base section, and a conductive layer is embedded in insulating material, with terminals on both main faces and outer connection regions laterally surrounded by the insulating material, allowing for dual-side cooling and large creepage distances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional vertical packages are used, then electrical insulation and separation distance are improved, but thermal dissipation efficiency deteriorates
Solution Approach 1:
The patent transitions from traditional vertical packaging to a horizontal package configuration, fundamentally changing the spatial dimension of thermal management. The heat dissipation path extends horizontally through the leadframe structure rather than vertically, enabling better thermal contact with cooling surfaces while maintaining electrical insulation through lateral separation of terminals.
2Volume of moving object
If compact horizontal packages are used, then device size is reduced, but manufacturing complexity increases
Solution Approach 1:
The leadframe structure serves multiple functions simultaneously: it provides mechanical support for the die, establishes electrical connections through integrated leads, enables thermal dissipation through its conductive structure, and creates electrical insulation through its geometric configuration. This multi-functionality reduces the need for separate components and simplifies the manufacturing process despite the compact horizontal form factor.
3Temperature
If dual-side cooling is implemented, then thermal dissipation is improved, but device complexity increases
Solution Approach 1:
The patent combines the thermal management function with the existing leadframe structure by integrating heat dissipation paths on both the top and bottom surfaces. The leadframe's conductive elements serve as thermal conduction pathways, merging the electrical connection function with thermal management function, thereby enabling dual-side cooling without adding separate complex cooling structures.
4Reliability
If large creepage distances are required for high voltage, then electrical insulation is improved, but device area increases
Solution Approach 1:
The patent employs asymmetric terminal arrangement and varied separation distances between terminals based on their voltage potentials. High-voltage terminals are positioned with larger creepage distances from low-voltage terminals, while terminals at similar voltage levels can be placed closer together. This asymmetric configuration optimizes electrical insulation for high-voltage operation while minimizing the overall device footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high thermal dissipation and reliable electrical insulation at high voltages, facilitating simple manufacturing without complex structures, suitable for high voltage applications with improved cooling efficiency.
Implementation Method 1
A die is coupled to the first face of the base section of the support structure... high thermal dissipation to the outside
Implementation Method 2
One or more layers of insulating material is around and embeds the die, the second terminal, the third terminal and the base section... reliable electrical insulation at high voltages
Data Source
AI summary
The packaged power electronic device has a bearing structure including a base section and a transverse section extending transversely to the base section. A die is bonded to the base section of the bearing structure and has a first terminal on a first main face and a second and a third terminal on a second main face. A package of insulating material embeds the semiconductor die, the second terminal, the third terminal and at least partially the carrying base. A first, a second and a third outer connection region are electrically coupled to the first, the second and the third terminals of the die, respectively, are laterally surrounded by the package and face the second main surface of the package. The transverse section of the bearing structure extends from the base section towards the second main surface of the package and has a higher height with respect to the die.