Horizontal PVT Reactor for Semiconductor Crystal Growth
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Solution Overview
Problem
Conventional vertically oriented physical vapor transport (PVT) systems for growing semiconductor single crystals face contamination issues due to graphite/carbon particles, limiting the production of high-quality crystals and increasing economic costs, as only one crystal can be grown at a time without contamination, and simultaneous growth methods introduce quality degradation.
Innovation Solution
A horizontally oriented PVT growth system where the reactor and growth structure are aligned transverse to the gravity direction, allowing for simultaneous growth of multiple crystals while minimizing contamination by graphite/carbon particles, using a common vacuum channel to connect multiple reactors and maintain consistent gas phase conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If vertically oriented PVT growth structure is used, then graphite particles are prevented from contaminating the growing crystal, but only one crystal can be grown at a time
Solution Approach 1:
The patent transitions from a vertical growth orientation to a horizontal growth orientation. By changing the spatial dimension of crystal growth from vertical (along gravity) to horizontal (transverse to gravity), the system enables simultaneous growth of multiple crystals without graphite particle contamination. The horizontal arrangement allows gravity to act perpendicular to the growth direction, preventing particle deposition on the crystal surfaces while maintaining crystal quality.
2Productivity
If simultaneous growth of multiple crystals is implemented, then production rate increases, but graphite particle contamination degrades crystal quality
Solution Approach 1:
The patent divides the growth chamber into multiple separate growth zones arranged horizontally, with each zone containing a single crystal seed. This segmentation allows multiple crystals to grow simultaneously in different spatial locations while maintaining isolated growth environments. Each crystal grows in its own horizontal zone, preventing interference and contamination between crystals while enabling parallel production.
Solution Approach 2:
By arranging growth zones horizontally rather than vertically, the patent creates spatial separation that prevents graphite particles from falling onto the crystals. The horizontal orientation positions crystals at different heights or lateral positions where gravity-driven particle deposition is minimized, allowing simultaneous growth without quality degradation.
3Ease of manufacture
If conventional crucibles are used without size modifications, then manufacturing simplicity is maintained, but production capacity is limited
Solution Approach 1:
The patent utilizes horizontal space arrangement instead of increasing vertical capacity. By organizing multiple growth zones horizontally within the chamber, the system increases production capacity without requiring larger or modified crucibles. The horizontal arrangement fits within conventional crucible dimensions while enabling multiple simultaneous crystal growth operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the simultaneous production of high-quality semiconductor single crystals with reduced contamination, increasing production rates and reducing economic losses associated with rejected crystals, while allowing for the use of conventional crucibles without size modifications.
Implementation Method 1
Physical vapor transport (PVT) is a crystal growing method that essentially involves sublimation of a suitable source material followed by re-condensation at a seed crystal
Implementation Method 2
Physical vapor transport (PVT) is a crystal growing method that essentially involves sublimation of a suitable source material followed by re-condensation at a seed crystal
Implementation Method 3
The sublimed vapor then diffuses towards the seed in a controlled manner, due to a temperature gradient established between source material and seed crystal
Implementation Method 4
The vacuum-sealed reactor is evacuated by one or more vacuum pumps and supplied with inert or doping gases via one or more gas feeds to create a controlled gas (gas mixture atmosphere)
Implementation Method 5
Heat for subliming the source material inside the PVT growth structures is generally provided by either inductive or resistive heating systems
Implementation Method 6
Heat for subliming the source material inside the PVT growth structures is generally provided by either inductive or resistive heating systems
Data Source
AI summary
A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.