Horizontal RGB Micro-LED Layout to Prevent Color Mixing
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Solution Overview
Problem
Conventional methods for manufacturing full-color displays using micro-light emitting diodes face challenges such as particle size control of quantum dots, reliability issues, limited mass production, lower luminous efficacy of green and red micro-light-emitting diodes compared to blue, and problems with color mixing, high driving voltage, and leakage current in vertically stacked RGB elements.
Innovation Solution
A method of manufacturing a photoelectronic device with multiple wavelengths by forming photo-device portions horizontally using semiconductor layers with different emission wavelengths, including a first type semiconductor layer, an active layer, and a second type semiconductor layer, with a buffer layer in between, and forming electrodes to enable independent operation of the photo-device portions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If vertically stacked RGB elements are used, then full-color display is achieved, but color mixing occurs during light emission
Solution Approach 1:
The patent transitions from vertical stacking to horizontal arrangement of RGB micro-light-emitting diodes. By changing the spatial dimension from vertical (stacked layers) to horizontal (side-by-side arrangement), the patent eliminates color mixing while maintaining full-color display capability. The horizontal configuration allows each color element to emit light independently without overlapping with adjacent colors.
2Adaptability or versatility
If vertically stacked RGB elements are used, then full-color display is achieved, but driving voltage increases
Solution Approach 1:
The patent changes the spatial arrangement from vertical stacking to horizontal configuration. This dimensional change eliminates the need for high driving voltage required to penetrate multiple stacked layers, thereby reducing electrical stress while maintaining full-color display functionality.
3Adaptability or versatility
If vertically stacked RGB elements are used, then full-color display is achieved, but leakage current increases
Solution Approach 1:
By transitioning from vertical stacking to horizontal arrangement, the patent eliminates leakage current between stacked layers. The horizontal configuration separates current paths, preventing the leakage issues inherent in vertically stacked structures while preserving full-color display capability.
4Adaptability or versatility
If green and red micro-light-emitting diodes are used, then full-color display is achieved, but luminous efficacy decreases
Solution Approach 1:
The patent combines green and red micro-light-emitting diodes with blue micro-light-emitting diodes in a horizontal configuration. This merging approach allows all three colors to operate at their optimal luminous efficacy points without the efficiency losses associated with quantum dot conversion, achieving both full-color display and high overall luminous efficacy.
5Adaptability or versatility
If quantum dots are used for green or red light emission, then full-color display is achieved, but particle size control becomes difficult
Solution Approach 1:
The patent extracts and eliminates the quantum dot component from the display structure. By directly using green and red micro-light-emitting diodes instead of quantum dots on blue LEDs, the patent removes the particle size control issue while maintaining full-color display capability through independent LED elements.
6Adaptability or versatility
If conventional manufacturing methods are used, then full-color display is achieved, but mass production is limited
Solution Approach 1:
The patent's horizontal arrangement of RGB micro-light-emitting diodes enables simplified manufacturing processes that are more amenable to mass production. This configuration allows for easier integration with existing semiconductor fabrication techniques and simpler assembly processes compared to vertical stacking, thereby improving productivity and mass production capability.
Data Source
AI summary
Disclosed is a method of manufacturing a photoelectronic device having multiple wavelengths, the method including forming a plurality of photo-device layers having different emission wavelengths on a substrate, each photo-device layer including a first type semiconductor layer, an active layer, and a second type semiconductor layer from the substrate, forming a buffer layer between the photo-device layers, exposing the second type semiconductor layer to top of each photo-device layer, and opening the first type semiconductor layer on the bottom of each photo-device layer to form a plurality of photo-device portions having different emission wavelengths in a horizontal direction based on the substrate, forming a first electrode in one region on the opened first type semiconductor layer, and forming a second electrode on each photo-device portion.